BSM15GD120D2 |
Part Number | BSM15GD120D2 |
Manufacturer | Siemens Semiconductor Group |
Description | BSM 15 GD 120 D2 IGBT Power Module • Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type BSM 15 GD 120 D2 Maximum Ratings Parameter C... |
Features |
eristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit
VGE(th)
4.5 5.5 2.5 3.1 0.3 1.2 6.5 3 3.7
V
VGE = VCE, IC = 0.6 mA
Collector-emitter saturation voltage
VCE(sat)
-
VGE = 15 V, IC = 15 A, Tj = 25 °C VGE = 15 V, IC = 15 A, Tj = 125 °C
Zero gate voltage collector current
ICES
0.5 -
mA
VCE = 1200 V, VGE = 0 V, Tj = 25 °C VCE = 1200 V, VGE = 0 V, Tj = 125 °C
Gate-emitter leakage current
IGES
150
nA
VGE = 20 V, VCE = 0 V
AC Characteristics Transconductance
gfs
5.5 1000 150 70 -
S pF -
VCE = 20 ... |
Document |
BSM15GD120D2 Data Sheet
PDF 138.49KB |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | BSM15GD120DN2 |
eupec GmbH |
IGBT | |
2 | BSM15GD100D |
Siemens |
IGBT | |
3 | BSM15GD60DN2 |
Siemens Semiconductor Group |
IGBT | |
4 | BSM15GP120 |
ETC |
IGBT | |
5 | BSM150GAL120DN2 |
Siemens Semiconductor Group |
IGBT | |
6 | BSM150GAL120DN2E3166 |
Siemens Semiconductor Group |
IGBT |