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| Part Number | Q62702-A3461 |
| Manufacturer | Siemens Semiconductor Group |
| Description | Silicon Dual Schottky Diode DBS mixer application to 12 GHz q Low noise figure q Medium barrier type q BAT 14-099 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BA... |
| Features |
apacitance VR = 0, f = 1 MHz Forward resistance IF = 10 mA / 50 mA Symbol min. VBR VF – – ∆VF Values typ. – max. – 4 Unit V 0.43 0.55 – – 5.5 – – 10 0.35 – mV pF Ω – – – CT RF Semiconductor Group 2 BAT 14-099 Forward current IF = f (VF) Forward current IF = f (TS; TA*) *Package mounted on alumina Reverse current IR = f (VR) Diode capacitance CT = f (VR) f = 1 MHz Semiconductor Group 3 BAT 14-099 S11-Parameters Typical impedance characteristics (with external bias I and Z0 = Ω) f GHz 1 2 3 4 5 6 7 8 9 10 11 12 I = 0.02 mA MAG ANG 0.99 0.96 0.95 0.93 0.93 0.91 0.89 0.88 0.86 0.8... |
| Document |
 Q62702-A3461 Data Sheet
PDF 79.96KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | Q62702-A3466 |
Siemens Semiconductor Group |
Silicon Switching Diode Array (For high-speed switching applications Electrical insulated diodes) |
|
| 2 | Q62702-A3468 |
Siemens Semiconductor Group |
Silicon Schottky Diode Array (General-purpose diode for high-speed switching Circuit protection Voltage clamping) |
|
| 3 | Q62702-A3469 |
Siemens Semiconductor Group |
Silicon Schottky Diode Array (General-purpose diode for high-speed switching Circuit protection Voltage clamping) |
|
| 4 | Q62702-A3470 |
Siemens Semiconductor Group |
Silicon Schottky Diodes (For low-loss/ fast-recovery/ meter protection/ bias isolation and clamping applications Integrated diffused guard ring) |
|
| 5 | Q62702-A3471 |
Siemens Semiconductor Group |
Silicon Switching Diode (Switching applications High breakdown voltage) |
|
| 6 | Q62702-A3473 |
Siemens Semiconductor Group |
NPN Silicon AF Transistor |
|
Desde 2024. D4U Semiconductor.
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