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CFY35-23 |
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| Part Number | CFY35-23 |
| Manufacturer | Siemens Semiconductor Group |
| Description | GaAs FET CFY 35 ________________________________________________________________________________________________________ Datasheet * Low noise * High gain * For low-noise front end amplifiers * For... |
| Features |
l characteristics at TA = 25°C, unless otherwise specified
CFY 35
________________________________________________________________________________________________________
Characteristics Drain-source saturation current
V = 2.5 V,
DS
Symbol
min
typ
max
Unit mA
V =0V
GS
IDSS VGS(P) gm IG F
10 -0.2
25
45 V
Pinch-off voltage
V = 2.5 V
DS
I = 1 mA
D
-1.2
-2.5 mS
Transconductance
V = 2.5 V
DS
I = 10 mA
D
20
30
µA
Gate leakage current
V = 2.5 V
DS
I = 10 mA
D
-
0.1
2 dB
Noise figure
V = 2.5 V
DS
I = 10 mA
D
f = 12 GHz CFY 35-20 CFY 35-23
-
1.9 2.2
2.0 2.3 dB
Associat... |
| Document |
 CFY35-23 Data Sheet
PDF 33.35KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | CFY35-20 |
Siemens Semiconductor Group |
GaAs FET (Low noise High gain For low-noise front end amplifiers For DBS down converters) |
|
| 2 | CFY35 |
Siemens Semiconductor Group |
GaAs FET (Low noise High gain For low-noise front end amplifiers For DBS down converters) |
|
| 3 | CFY30 |
Siemens Semiconductor Group |
GaAs FET (Low noise Fmin = 1.4 dB @ 4 GHz High gain 11.5 dB typ. @ 4 GHz) |
|
| 4 | CFY25 |
Siemens Semiconductor Group |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
|
| 5 | CFY25 |
Infineon |
HiRel X-Band GaAs MOSFET |
|
| 6 | CFY25-17 |
Siemens Semiconductor Group |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
|
Desde 2024. D4U Semiconductor.
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