Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | CFY30 |
Siemens Semiconductor Group |
GaAs FET (Low noise Fmin = 1.4 dB @ 4 GHz High gain 11.5 dB typ. @ 4 GHz) |
|
| 2 | CFY35-20 |
Siemens Semiconductor Group |
GaAs FET (Low noise High gain For low-noise front end amplifiers For DBS down converters) |
|
| 3 | CFY35-23 |
Siemens Semiconductor Group |
GaAs FET (Low noise High gain For low-noise front end amplifiers For DBS down converters) |
|
| 4 | CFY25 |
Siemens Semiconductor Group |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
|
| 5 | CFY25 |
Infineon |
HiRel X-Band GaAs MOSFET |
|
| 6 | CFY25-17 |
Siemens Semiconductor Group |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
|
| 7 | CFY25-20 |
Siemens Semiconductor Group |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
|
| 8 | CFY25-20 |
Infineon |
HiRel X-Band GaAs MOSFET |
|
| 9 | CFY25-20P |
Infineon |
HiRel X-Band GaAs MOSFET |
|
| 10 | CFY25-23 |
Siemens Semiconductor Group |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
|
Desde 2024. D4U Semiconductor.
|