CFY25 MOSFET Datasheet, Distribuidor, stock y mejor precio

CFY25

Part Number	CFY25
Manufacturer	Siemens Semiconductor Group
Title	GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization)
Description	GaAs FET q q q q q CFY 25 Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization ESD: Electrostatic discharge sensitive device, observe handling precautions! Type CFY 25-17 CFY 25-20 CFY 25-23 Marking C5 C6 C7 Ordering Code (tape and reel) Q62703-F106 Q.
Features	VDS = 3 V, VGS = 0 Pinch-off voltage ID = 1 mA, VDS = 3 V Gate leakage current ID = 15 mA, VDS = 3 V Transconductance ID = 15 mA, VDS = 3 V Noise figure IDS = 15 mA, VDS = 3 V, f = 12 GHz CFY 25-17 CFY 25-20 CFY 25-23 Associated gain IDS = 15 mA, VDS = 3 V, f = 12 GHz CFY 25-17 CFY 25-20 CFY 25-23 Symbol min. IDSS Vp IG gm F – – – Ga 9 8.5 8.5 9.5 9 9 – – – 1.6 1.9 2.2 1.7 2.0 2.3 15 – 0.3 – 30 Va.

No.	Parte #	Fabricante	Descripción
1	CFY25-17	Siemens Semiconductor Group	GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization)
2	CFY25-20	Siemens Semiconductor Group	GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization)
3	CFY25-20	Infineon	HiRel X-Band GaAs MOSFET
4	CFY25-20P	Infineon	HiRel X-Band GaAs MOSFET
5	CFY25-23	Siemens Semiconductor Group	GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization)
6	CFY25-23	Infineon	HiRel X-Band GaAs MOSFET
7	CFY25-23P	Infineon	HiRel X-Band GaAs MOSFET
8	CFY25-P	Infineon	HiRel X-Band GaAs MOSFET
9	CFY27	Infineon Technologies AG	HiRel Ku-Band GaAs General Purpose MESFET
10	CFY27-38	Infineon Technologies AG	HiRel Ku-Band GaAs General Purpose MESFET