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BSM100GAL120DN2 |
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| Part Number | BSM100GAL120DN2 |
| Manufacturer | Siemens Semiconductor Group |
| Description | BSM 100 GAL 120 DN2 IGBT Power Module • Single switch with chopper diode • Including fast free-wheeling diodes • Package with insulated metal base plate Type BSM 100 GAL 120 DN2 Maximum Ratings Par... |
| Features |
Vis
-
Semiconductor Group
1
Mar-29-1996
BSM 100 GAL 120 DN2
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit
VGE(th)
4.5 5.5 3.1 2.5 1.5 6 6.5 3.7 3
V
VGE = VCE, IC = 4 mA
Collector-emitter saturation voltage
VCE(sat)
-
VGE = 15 V, IC = 100 A, Tj = 25 °C VGE = 15 V, IC = 100 A, Tj = 125 °C
Zero gate voltage collector current
ICES
2 -
mA
VCE = 1200 V, VGE = 0 V, Tj = 25 °C VCE = 1200 V, VGE = 0 V, Tj = 125 °C
Gate-emitter leakage current
IGES
200
nA
VGE = 20 V, VCE = 0 ... |
| Document |
 BSM100GAL120DN2 Data Sheet
PDF 81.21KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BSM100GB120DN2 |
Siemens Semiconductor Group |
IGBT |
|
| 2 | BSM100GB120DN2K |
Siemens Semiconductor Group |
IGBT |
|
| 3 | BSM100GB170DN2 |
Siemens Semiconductor Group |
IGBT |
|
| 4 | BSM100GB60DLC |
eupec |
IGBT-Module |
|
| 5 | BSM100GD120DLC |
eupec GmbH |
IGBT-Module |
|
| 6 | BSM100GD120DN2 |
Siemens Semiconductor Group |
IGBT |
|
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