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BSM15GD60DN2 |
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| Part Number | BSM15GD60DN2 |
| Manufacturer | Siemens Semiconductor Group |
| Description | BSM 15 GD 60 DN2 IGBT Power Module • Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type BSM 15 GD 60 DN2 Maximum Ratings Parameter C... |
| Features |
otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit
VGE(th)
4.5 5.5 2.1 2.2 6.5 2.7 2.8
V
VGE = VCE, IC = 0.4 mA
Collector-emitter saturation voltage
VCE(sat)
-
VGE = 15 V, IC = 15 A, Tj = 25 °C VGE = 15 V, IC = 15 A, Tj = 125 °C
Zero gate voltage collector current
ICES
1
mA nA 100
VCE = 600 V, VGE = 0 V, Tj = 25 °C
Gate-emitter leakage current
IGES
VGE = 25 V, VCE = 0 V
AC Characteristics Transconductance
gfs
4.5 800 85 52 -
S pF -
VCE = 20 V, IC = 15 A
Input capacitance
Ciss Coss
-
VCE = 25 V, VGE = 0 V, f = 1 MHz
Outpu... |
| Document |
 BSM15GD60DN2 Data Sheet
PDF 123.03KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BSM15GD100D |
Siemens |
IGBT |
|
| 2 | BSM15GD120D2 |
Siemens Semiconductor Group |
IGBT |
|
| 3 | BSM15GD120DN2 |
eupec GmbH |
IGBT |
|
| 4 | BSM15GP120 |
ETC |
IGBT |
|
| 5 | BSM150GAL120DN2 |
Siemens Semiconductor Group |
IGBT |
|
| 6 | BSM150GAL120DN2E3166 |
Siemens Semiconductor Group |
IGBT |
|
Desde 2024. D4U Semiconductor.
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