BSP92 |
Part Number | BSP92 |
Manufacturer | Siemens Semiconductor Group |
Description | BSP 92 SIPMOS ® Small-Signal Transistor • P channel • Enhancement mode • Logic Level • VGS(th) = -0.8...-2.0 V Pin 1 G Type BSP 92 Type BSP 92 Pin 2 D Pin 3 S Pin 4 D VDS -240 V ID -0.2 A RDS(on)... |
Features |
g RthJA RthJS
1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit
V(BR)DSS
-240 -1.5 -0.1 -10 -10 12 -2
V
VGS = 0 V, ID = -0.25 mA, Tj = 25 °C
Gate threshold voltage
VGS(th)
-0.8
VGS=VDS, ID = -1 mA
Zero gate voltage drain current
IDSS
-1 -100 -0.2
µA
VDS = -240 V, VGS = 0 V, Tj = 25 °C VDS = -240 V, VGS = 0 V, Tj = 125 °C VDS = -60 V, VGS = 0 V, Tj = 25 °C
Gate-source leakage ... |
Document |
BSP92 Data Sheet
PDF 97.23KB |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | BSP92 |
NXP |
P-channel enhancement mode vertical D-MOS transistor | |
2 | BSP92P |
Infineon Technologies AG |
SIPMOS Small-Signal-Transistor | |
3 | BSP92P |
Infineon Technologies |
SIPMOS Small Signal Transistor | |
4 | BSP030 |
NXP |
N-Channel MOSFET | |
5 | BSP090 |
NXP |
P-channel enhancement mode vertical D-MOS transistor | |
6 | BSP100 |
NXP |
N-channel enhancement mode TrenchMOS transistor |