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BSP129 |
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| Part Number | BSP129 |
| Manufacturer | Siemens Semiconductor Group |
| Description | SIPMOS® Small-Signal Transistor BSP 129 q q q q q q q VDS 240 V ID 0.2 A RDS(on) 20 Ω N channel Depletion mode High dynamic resistance Available grouped in VGS(th) Type Ordering Code Tape and Re... |
| Features |
b 40 mm × 40 mm × 1.5 mm with 6 cm2 copper area for drain connection.
Semiconductor Group
1
09.96
BSP 129
Electrical Characteristics at Tj = 25 ˚C, unless otherwise specified. Parameter Symbol min. Static Characteristics Drain-source breakdown voltage VGS = − 3 V, ID = 0.25 mA Gate threshold voltage VDS = 3 V, ID = 1 mA Drain-source cutoff current VDS = 240 V, VGS = − 3 V Tj = 25 ˚C Tj = 125 ˚C Gate-source leakage current VGS = 20 V, VDS = 0 Drain-source on-resistance VGS = 0 V, ID = 0.014 A Dynamic Characteristics Forward transconductance VDS ≥ 2 × ID × RDS(on)max, ID = 0.25 A Input capa... |
| Document |
 BSP129 Data Sheet
PDF 321.37KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BSP120 |
NXP |
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| 2 | BSP121 |
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| 3 | BSP122 |
NXP |
N-channel enhancement mode vertical D-MOS transistor |
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| 4 | BSP123 |
Siemens Semiconductor Group |
SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level) |
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| 5 | BSP123 |
Infineon Technologies AG |
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| 6 | BSP125 |
Siemens Semiconductor Group |
SIPMOS Small-Signal Transistor (N channel Enhancement mode) |
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| 7 | BSP125 |
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SIPMOS Power-Transistor |
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| 8 | BSP126 |
NXP |
N-channel enhancement mode vertical D-MOS transistor |
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| 9 | BSP127 |
NXP |
N-channel enhancement mode vertical D-MOS transistor |
|
| 10 | BSP128 |
NXP |
N-channel enhancement mode vertical D-MOS transistor |
|
Desde 2024. D4U Semiconductor.
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