Busque con el número de pieza junto con el fabricante o la descripción
BSP123 |
Click to view a larger image
| Part Number | BSP123 |
| Manufacturer | Siemens Semiconductor Group |
| Description | BSP 123 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS(th) = 0.8...2.0V Pin 1 G Type BSP 123 Type BSP 123 Pin 2 D Pin 3 S Pin 4 D VDS 100 V ID 0.38 A RDS(on) 6Ω Package SOT-223 Marking BSP 123 Ordering Code Q67000-S306 Tape and Reel Information E6327 Maximum Ratings Parameter Drain source voltage Drain-gate volt. |
| Features | g RthJA RthJS 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 100 1.5 0.1 10 10 4 6 2 1 100 10 50 V VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage VGS(th) 0.8 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS µA nA nA Ω 6 10 VDS = 100 V, VGS = 0 V, Tj = 25 °C VDS = 100 V, VGS = 0 V, Tj = 125 °C VDS = 20 V, VGS = 0 V, Tj = 25 °C Gate-source leakage . |
| Datasheet |
 BSP123 Data Sheet
PDF 160.74KB |
| Distributor | Stock | Price | Buy |
|---|
BSP123 |
| Part Number | BSP123 |
| Manufacturer | Infineon Technologies AG |
| Title | SIPMOS Small-Signal-Transistor |
| Description | and charts stated herein. Infineon Technologies is an approved CECC manufacturer. BSP123 Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives world. |
| Features |
• N-Channel • Enhancement mode • Logic Level • dv/dt rated Product Summary VDS RDS(on) ID 100 6 0.37 SOT223 V Ω A Type BSP123 Package SOT223 Ordering Code Q67000-S306 Tape and Reel Information E6327: 1000 pcs/reel Marking BSP123 Maximum Ratings, at T j = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current TA=25°C TA=70°C Value 0.37 0.3 Unit A ID Pulsed drain cur. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BSP120 |
NXP |
N-channel enhancement mode vertical D-MOS transistor |
|
| 2 | BSP121 |
NXP |
N-channel enhancement mode vertical D-MOS transistor |
|
| 3 | BSP122 |
NXP |
N-channel enhancement mode vertical D-MOS transistor |
|
| 4 | BSP125 |
Siemens Semiconductor Group |
SIPMOS Small-Signal Transistor (N channel Enhancement mode) |
|
| 5 | BSP125 |
Infineon Technologies AG |
SIPMOS Power-Transistor |
|
| 6 | BSP126 |
NXP |
N-channel enhancement mode vertical D-MOS transistor |
|
| 7 | BSP127 |
NXP |
N-channel enhancement mode vertical D-MOS transistor |
|
| 8 | BSP128 |
NXP |
N-channel enhancement mode vertical D-MOS transistor |
|
| 9 | BSP129 |
Siemens Semiconductor Group |
SIPMOS Small-Signal Transistor (N channel Depletion mode High dynamic resistance) |
|
| 10 | BSP129 |
Infineon Technologies AG |
SIPMOS Small-Signal-Transistor |
|
Desde 2024. D4U Semiconductor.
|