BSP123 |
Part Number | BSP123 |
Manufacturer | Infineon (https://www.infineon.com/) Technologies AG |
Description | and charts stated herein. Infineon Technologies is an approved CECC manufacturer. BSP123 Information For further information on technology, delivery terms and conditions and prices please contact y... |
Features |
123
Symbol min. RthJS RthJA -
Values typ. 15 max. 25
Unit
K/W
100 51
115 70
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage
VGS=0, ID=250µA
Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) RDS(on) RDS(on) 100 0.8
Values typ. 1.4 max. 1.8
Unit
V
Gate threshold voltage, VGS = VDS
ID=50µA
Zero gate voltage drain current
VDS=100V, VGS=0, T j=25°C VDS=100V, VGS=0, T j=150°C
µA 14 4.8 3.5 0.01 5 10 30 10 6 nA Ω
Gate-source leakage current
VGS=20V, VDS=0
Drain-source on-state resistance
VGS=2.8V, ID=15... |
Document |
BSP123 Data Sheet
PDF 114.63KB |
Distributor | Stock | Price | Buy |
---|
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | BSP120 |
NXP |
N-channel enhancement mode vertical D-MOS transistor | |
2 | BSP121 |
NXP |
N-channel enhancement mode vertical D-MOS transistor | |
3 | BSP122 |
NXP |
N-channel enhancement mode vertical D-MOS transistor | |
4 | BSP123 |
Siemens Semiconductor Group |
SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level) | |
5 | BSP125 |
Siemens Semiconductor Group |
SIPMOS Small-Signal Transistor (N channel Enhancement mode) | |
6 | BSP125 |
Infineon Technologies AG |
SIPMOS Power-Transistor | |
7 | BSP126 |
NXP |
N-channel enhancement mode vertical D-MOS transistor | |
8 | BSP127 |
NXP |
N-channel enhancement mode vertical D-MOS transistor | |
9 | BSP128 |
NXP |
N-channel enhancement mode vertical D-MOS transistor | |
10 | BSP129 |
Siemens Semiconductor Group |
SIPMOS Small-Signal Transistor (N channel Depletion mode High dynamic resistance) |