| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
UTC |
2SB1132 * Low VCE(SAT). VCE(SAT) = -0.2V(Typ.) (IC/IB= -500mA/-50mA) 1 TO-252 *Pb-free plating product number: 2SB1132L ORDERING INFORMATION Order Number Package Normal Lead Free Plating www.DataSheet4U.com 2SB1132-x-AB3-R 2SB1132L-x-AB3-R SOT-89 2SB1132 |
|
|
|
|
UTC |
SILICON PNP TRANSISTORS * Complementary to 2SD718. * Recommended for 45 ~ 50W Audio Frequency Amplifier Output Stage. 1 TO-3P 1: BASE 2: COLLECTOR 3: EMITTER *Pb-free plating product number: 2SB688L ABSOLUTE MAXIMUM RATINGS (Ta=25℃) PARAMETER Collector-Base Voltage Colle |
|
|
|
|
UTC |
MEDIUM POWER LOW-VOLTAGE TRANSISTOR * High current output up to 3A * Low saturation voltage * Complement to 2SD882 ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SB772L-x-T60-K 2SB772G-x-T60-K 2SB772L-x-T6C-K 2SB772G-x-T6C-K 2SB772L-x-TM3-T 2SB772G-x-TM3-T 2S |
|
|
|
|
UTC |
LOW FREQUENCY PNP TRANSISTOR * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A) SOT-89 *Pb-free plating product number: 2SB1386L ORDERING INFORMATION Order Number www.DataSheet4U.com Package Normal Lead Free Plating 2SB13 |
|
|
|
|
UTC |
PNP SILICON TRANSISTOR * Large collector power dissipation Pc. * Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. ORDERING INFORMATION Order Number 2SB766AG-x-AB3-R Note: Pin Assign |
|
|
|
|
UTC |
PNP EPITAXIAL SILICON TRANSISTOR * Low frequency power amplifier * Complement to 2SD468 1 TO-92 1 TO-92NL ORDERING INFORMATION Order Number Lead Free Halogen Free 2SB562L-x-T92-B 2SB562G-x-T92-B 2SB562L-x-T92-K 2SB562G-x-T92-K 2SB562L-x-T9N-B 2SB562G-x-T9N-B 2SB562L-x |
|
|
|
|
UTC |
BIPOLAR POWER TRANSISTOR Box, K: Bulk, R: Tape Reel (2) AB3: SOT-89, T6C: TO-126C, T60: TO-126, T 92: TO-92 (3) x: refer to Classification of hFE (4) L: Lead Free Plating, Blank: Pb/Sn www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd 1 of 4 QW-R204-006, |
|
|
|
|
UTC |
POWER TRANSISTOR * Low Collector Saturation Voltage: VCE(sat)< -0.4V (Ic = -1.0A, IB = -100mA ) * Excellent DC Current Gain Linearity : hFE = 100 Typ. (VCE = -1.0V, IC = -1.0A) ORDERING INFORMATION Order Number 2SB798G-x-AB3-R Note: Pin Assignment: B: Base C: Col |
|
|
|
|
UTC |
HIGH VOLTAGE TRANSISTOR tion Temperature TJ +125 °C Storage Temperature TSTG -40 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation |
|
|
|
|
UTC |
PNP Transistor * Low base drive ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SB1017L-x-TF3-T 2SB1017G-x-TF3-T Package TO-220F Pin Assignment 123 BCE Packing Tube 2SB1017L-x-TF3-T (1)Packing Type (2)Package Type (3)Rank (4)Lead Free (1) |
|
|
|
|
UTC |
PNP EPITAXIAL SILICON TRANSISTOR ES CO., LTD www.unisonic.com.tw 2 of 5 QW-R201-066.G 2SB1116/A PNP SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector to Base Voltage 2SB1116 2SB1116A VCBO -60 -80 |
|
|
|
|
UTC |
PNP EPITAXIAL SILICON TRANSISTOR ES CO., LTD www.unisonic.com.tw 2 of 5 QW-R201-066.G 2SB1116/A PNP SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector to Base Voltage 2SB1116 2SB1116A VCBO -60 -80 |
|
|
|
|
UTC |
MEDIUM POWER LOW-VOLTAGE TRANSISTOR *High current output up to 3A *Low saturation voltage 1 SOT-89 ORDERING INFORMATION Ordering Number 2SB1188G-x-AB3-R Note: Pin Assignment: B: Base C: Collector Package SOT-89 E: Emitter Pin Assignment 123 BCE Packing Tape Reel MARKING www |
|
|
|
|
UTC |
PNP PLANAR TRANSISTOR * Adoption of FBET, MBIT processes * Large current capacity and wide ASO * Low collector-to-emitter saturation voltage * Fast switching speed 1 SOT-89 1 TO-251 1 TO-252 1 TO-92 1 TO-126C ORDERING INFORMATION Order Number Lead Free Halogen |
|
|
|
|
UTC |
POWER TRANSISTOR *High breakdown voltage and high current. BVCEO= -80V, IC= -1A *Good hFE linearity. *Low VCE(SAT) 1 TO-252 *Pb-free plating product number: 2SB1260L ORDERING INFORMATION Order Number Normal Lead Free Plating 2SB1260-x-AB3-R 2SB1260L-x-AB3-R 2SB126 |
|
|
|
|
UTC |
SILICON PNP TRANSISTOR V Emitter-Base Voltage VEBO -5 V Collector Current IC -4 A Collector Current (IC Peak) IC(PEAK) -8 A TO-126 TO-126C 10 W Total Power Dissipation (TC=25°C) TO-220 TO-220F PD 40 W 20 W TO-252 TO-252D 25 W Junction Temperature |
|
|
|
|
UTC |
PNP SILICON TRANSISTOR *High Power Dissipation *Complementary to 2SD1691 ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SB1151L-x-AA3-R 2SB1151G-x-AA3-R 2SB1151L-x-TA3-T 2SB1151G-x-TA3-T 2SB1151L-x-T60-K 2SB1151G-x-T60-K 2SB1151L-x-TN3-R 2SB1151 |
|
|
|
|
UTC |
LOW FREQUENCY PNP TRANSISTOR *High breakdown voltage : BVCEO= -80V *Low VCE(sat) : VCE(sat)= -0.2V (Typ) (Ic/IB = -0.5A/-50mA) 3 SOT-23 1:EMITTER 2:BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Ta=25°C) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base |
|
|
|
|
UTC |
HIGH VOLTAGE SWITCHING TRANSISTOR * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A) ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 2SB1412L-x-TN3-R 2SB1412G-x-TN3-R TO-252 Note: Pin Assignment: B: Bas |
|
|
|
|
UTC |
PNP Transistor ature TJ TSTG 150 -55 ~ +150 °C °C Notes: 1.Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. PW≤1 |
|
Desde 2024. D4U Semiconductor.
|