Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
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2SB1386 |
| Part Number | 2SB1386 |
| Manufacturer | Rohm |
| Title | Low Frequency Transistor |
| Description | Transistors Low Frequency Transistor (*20V,*5A) 2SB1386 / 2SB1412 / 2SB1326 / 2SB1436 FFeatures 1) Low VCE(sat). VCE(sat) = *0.35V (Typ.) (IC / IB = *4A / *0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2098 / 2SD2118 / 2SD2097 / 2SD2166. FStructure Epitaxial planar type . |
| Features | 1) Low VCE(sat). VCE(sat) = *0.35V (Typ.) (IC / IB = *4A / *0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2098 / 2SD2118 / 2SD2097 / 2SD2166. FStructure Epitaxial planar type PNP silicon transistor FExternal dimensions (Units: mm) (96-141-B204) 211 Transistors FAbsolute maximum ratings (Ta = 25_C) 2SB1386 / 2SB1412 / 2SB1326 / 2SB1436 FElectrical characteristics (T. |
2SB1386 |
| Part Number | 2SB1386 |
| Manufacturer | BLUE ROCKET ELECTRONICS |
| Title | Silicon PNP transistor |
| Description | SOT-89 PNP 。Silicon PNP transistor in a SOT-89 Plastic Package. / Features ,, 2SD2098 。 Low VCE(sat), excellent DC current gain , complements the 2SD2098. / Applications 。 General power amplifier applications. / Equivalent Circuit / Pinning 1 2 3 PIN1：Base PIN 2：Collector / Mar. |
| Features | ,, 2SD2098 。 Low VCE(sat), excellent DC current gain , complements the 2SD2098. / Applications 。 General power amplifier applications. / Equivalent Circuit / Pinning 1 2 3 PIN1：Base PIN 2：Collector / Marking hFE Classifications Symbol hFE Range Marking P 82～180 BHPH PIN 3：Emitter Q 120～270 BHQH R 180～390 BHRH ** ** ** http://www.fsbrec.com 1/6 2SB1386 Rev.E Mar.-2016 DATA S. |
2SB1386 |
| Part Number | 2SB1386 |
| Manufacturer | Power Silicon |
| Title | PNP GENERAL PURPOSE TRANSISTORS |
| Description | DATA SHEET 2SB1386 PNP GENERAL PURPOSE TRANSISTORS VOLTAGE -20 Volts CURRENT -5.0 Ampere FEATURES z NPN SILICON EPITAXIAL PLANAR TRANSISTOR FOR SWITCHING AND AMPLIFIER APPLICATIONS z COLLECTOR-EMITTER VOLTAGE VCE = -20V z COLLECTOR CURRENT IC = -5 A .181 (4.6) .173( 4.4) .061 (1.55)REF. 0.063 (1.. |
| Features | z NPN SILICON EPITAXIAL PLANAR TRANSISTOR FOR SWITCHING AND AMPLIFIER APPLICATIONS z COLLECTOR-EMITTER VOLTAGE VCE = -20V z COLLECTOR CURRENT IC = -5 A .181 (4.6) .173( 4.4) .061 (1.55)REF. 0.063 (1.6 ) 0.055 (145 ) .1 6 7( 4. 2 5) . 15 5 (3 .9 4 ) . 10 2 (2 .6 ) .0 91 (2 .3) 1. 2 0 .9 MECHANICAL DATA z CASE：SOT-89,PLASTIC z TERMINALS：SOLDERABLE PER MIL-STD-202, METHOD 208 z APPROX. WEIGHT:0. |
2SB1386 |
| Part Number | 2SB1386 |
| Manufacturer | HOTTECH |
| Title | PNP Transistor |
| Description | Plastic-Encapsulate Transistors FEATURES • Low collector saturation voltage, • Execllent current-to-gain characteristics 2SB1386 (PNP) Maximum Ratings (Ta=25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power dissipation J. |
| Features |
• Low collector saturation voltage, • Execllent current-to-gain characteristics 2SB1386 (PNP) Maximum Ratings (Ta=25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power dissipation Junction Temperature Storage Temperature unless otherwise noted) Symbol Value VCBO -30 VCEO -20 VEBO -6 IC -5 PC 0.5 TJ 150 Tstg -55. |
2SB1386 |
| Part Number | 2SB1386 |
| Manufacturer | Weitron Technology |
| Title | Epitaxial Planar Transistor |
| Description | 2SB1386 Epitaxial Planar Transistor PNP Silicon 1 BASE COLLECTOR 3 1 2 EMITTER 3 2 SOT-23 MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC Value -20 -30 -6.0 Unit Vdc Vdc Vdc mAdc THERMA. |
| Features | Unit Vdc Vdc Vdc uAdc uAdc WEITRON http://www.weitron.com.tw 2SB1386 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min TYP Max Unit ON CHARACTERISTICS DC Current Gain (IC = -0.5 Adc, VCE = -2.0 Vdc) Transition Frequency (I E = 50 mAdc, VCE = -6.0 Vdc, f=30MHz) Output Capacitance (I E = 0 Adc, VCB = -20 Vdc, f=1MHz) hFE fT Cob 82 - 390 - - 12. |
2SB1386 |
| Part Number | 2SB1386 |
| Manufacturer | WILLAS |
| Title | SOT-89 Plastic-Encapsulate Transistors |
| Description | WILLAS S1O.0ATS-8UR9FAPClEaMsOtUicNT-ESCnHcOaTTpKsYuBAlaRtReIERTRraECnTsIFiIEsRtSo-r2s0V- 200V SOD-123+ PACKAGE FM120-M+ 2SB1386 THRU FM1200-M+ Pb Free Product Features TRANSI•SBbTeaOtttceRhr pr(erPovcNeerPsses) design, excellent power dissipation offer leakage current and thermal resistance. s. |
| Features |
TRANSI •SBbTeaOtttceRhr pr(erPovcNeerPsses) design, excellent power dissipation offer leakage current and thermal resistance. s FEATUR • LEoopSwtimpirzoefibleosaurdrfaspcea moun ce. ted ap plicati on in order to z Low • Lcoowllepocwtoerr sloastsu, rhaigtihoenffvicoieltnacgy.e z Exe • •cHHlliieggnhh tscuucrrugrerernectancpat-aptboaib-ligitlyiat.yi,nlocwhfaorrawcatredrvisotltiacgse drop. z . |
2SB1386 |
| Part Number | 2SB1386 |
| Manufacturer | SeCoS |
| Title | PNP Silicon Low Frequency Transistor |
| Description | Elektronische Bauelemente 2SB1386 -5A, -30V PNP Silicon Low Frequency Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Low VCE(sat) Excellent DC current gain characteristics Complements the 2SD2098 CLASSIFICATION OF hFE Product-Rank 2SB1386-P Range 82~1. |
| Features | Low VCE(sat) Excellent DC current gain characteristics Complements the 2SD2098 CLASSIFICATION OF hFE Product-Rank 2SB1386-P Range 82~180 Marking BHP 2SB1386-Q 120~270 BHQ 2SB1386-R 180~390 BHR SOT-89 123 A EC 4 B F G H J D K L PACKAGE INFORMATION Package MPQ SOT-89 1K LeaderSize 7’ inch REF. A B C D E F Millimeter Min. Max. 4.40 3.94 4.60 4.25 1.40 1.60 2.30 2.60 1.50 1.70. |
2SB1386 |
| Part Number | 2SB1386 |
| Manufacturer | Jin Yu Semiconductor |
| Title | PNP Transistor |
| Description | 2SB1 38 6 TRANSISTOR(PNP) FEATURES z Low collector saturation voltage, z Execllent current-to-gain characteristics MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter VCBO Collector-Base Voltage VCEO VEBO IC PC TJ Tstg Collector-Emitter Voltage Emitter-Base Voltage Collector Cu. |
| Features | z Low collector saturation voltage, z Execllent current-to-gain characteristics MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter VCBO Collector-Base Voltage VCEO VEBO IC PC TJ Tstg Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value -30 -20 -6 -5 0.5 150 -55-150 Units V V V . |
2SB1386 |
| Part Number | 2SB1386 |
| Manufacturer | GME |
| Title | PNP Silicon Epitaxial Planar Transistor |
| Description | Production specification PNP Silicon Epitaxial Planar Transistor FEATURES z Low VCE(sat)=-0.35V(Typ.) (IC/IB=-4A/-0.1A). Pb Lead-free z Excellent DC current gain characteristics. z Complementary: 2SD2098. 2SB1386 APPLICATIONS z Low frequency transistor. ORDERING INFORMATION Type No. Markin. |
| Features | z Low VCE(sat)=-0.35V(Typ.) (IC/IB=-4A/-0.1A). Pb Lead-free z Excellent DC current gain characteristics. z Complementary: 2SD2098. 2SB1386 APPLICATIONS z Low frequency transistor. ORDERING INFORMATION Type No. Marking 2SB1386 BHP/BHQ/BHR SOT-89 Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO VCEO Collector-Base Voltage Collector-E. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SB1381 |
Toshiba Semiconductor |
TRANSISTOR |
|
| 2 | 2SB1381 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 3 | 2SB1381 |
INCHANGE |
PNP Transistor |
|
| 4 | 2SB1382 |
Sanken electric |
Silicon PNP Transistor |
|
| 5 | 2SB1382 |
INCHANGE |
PNP Transistor |
|
| 6 | 2SB1382 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 7 | 2SB1383 |
Sanken electric |
Silicon PNP Transistor |
|
| 8 | 2SB1383 |
INCHANGE |
PNP Transistor |
|
| 9 | 2SB1386 |
JCET |
PNP Transistor |
|
| 10 | 2SB1386 |
KEXIN |
Low Frequency Transistor |
|
Desde 2024. D4U Semiconductor.
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