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2SB1386 |
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| Part Number | 2SB1386 |
| Manufacturer | Jin Yu Semiconductor |
| Description | 2SB1 38 6 TRANSISTOR(PNP) FEATURES z Low collector saturation voltage, z Execllent current-to-gain characteristics MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter VCBO Collecto... |
| Features |
z Low collector saturation voltage, z Execllent current-to-gain characteristics
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO VEBO IC PC TJ Tstg
Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature
Value -30
-20 -6 -5 0.5 150 -55-150
Units V
V V A W ℃ ℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-o... |
| Document |
 2SB1386 Data Sheet
PDF 384.85KB |
Desde 2024. D4U Semiconductor.
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