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| Distributor | Stock | Price | Buy |
|---|
2SB1382 |
| Part Number | 2SB1382 |
| Manufacturer | INCHANGE |
| Title | PNP Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·High DC Current Gain- : hFE= 2000( Min.) @(IC= -8A, VCE= -4V) ·Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max)@ (IC= -8A, IB= -16mA) ·Complement to Type 2SD2082 ·Minimum Lot-to-Lot variations for robust device performance and rel. |
| Features | nsistor 2SB1382 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -8A; IB= -16mA VBE(sat) Base-Emitter Saturation Voltage IC= -8A; IB= -16mA ICBO Collector Cutoff Current VCB= -120V ; IE= 0 IEBO Emitter Cutoff Current VEB= -6V; IC= 0. |
2SB1382 |
| Part Number | 2SB1382 |
| Manufacturer | Sanken electric |
| Title | Silicon PNP Transistor |
| Description | (2 k Ω) (80 Ω) E Darlington sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SB1382 –120 –120 –6 –16(Pulse–26) –1 75(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C 2SB1382 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=. |
| Features |
6 ton (µs) 0.8typ tstg (µs) 1.8typ tf (µs) 1.0typ
3.35
B
C
E
Weight : Approx 6.5g a. Type No. b. Lot No.
I C – V CE Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) –26 V CE ( sat ) – I B Characteristics (Typical) –3 I C – V BE Temperature Characteristics (Typical) –16 (V C E = –4V) 0m –4 – m 20 A A A –12m –20 Collector Current I C (A) –6 mA Collect. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SB1381 |
Toshiba Semiconductor |
TRANSISTOR |
|
| 2 | 2SB1381 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 3 | 2SB1381 |
INCHANGE |
PNP Transistor |
|
| 4 | 2SB1383 |
Sanken electric |
Silicon PNP Transistor |
|
| 5 | 2SB1383 |
INCHANGE |
PNP Transistor |
|
| 6 | 2SB1386 |
Rohm |
Low Frequency Transistor |
|
| 7 | 2SB1386 |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor |
|
| 8 | 2SB1386 |
GME |
PNP Silicon Epitaxial Planar Transistor |
|
| 9 | 2SB1386 |
Power Silicon |
PNP GENERAL PURPOSE TRANSISTORS |
|
| 10 | 2SB1386 |
JCET |
PNP Transistor |
|
Desde 2024. D4U Semiconductor.
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