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| Distributor | Stock | Price | Buy |
|---|
2SB1383 |
| Part Number | 2SB1383 |
| Manufacturer | INCHANGE |
| Title | PNP Transistor |
| Description | ·High DC Current Gain : hFE= 2000(Min.)@ IC= -12A, VCE= -4V ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO = -120V(Min) ·Complement to Type 2SD2083 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for driver of solenoid, motor and gen. |
| Features | SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -25mA ,IB= 0 -120 V VCE(sat) Collector-Emitter Saturation Voltage IC= -12A ,IB= -24mA -1.8 V VBE(sat) Base-Emitter Saturation Voltage IC= -12A ,IB= -24mA -2.5 V ICBO Collector Cutoff current VCB= -120V, IE= 0 -10 μA IEBO Emitter Cutoff current VEB= -6V, IC= 0 -10 mA hFE DC Current. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SB1381 |
Toshiba Semiconductor |
TRANSISTOR |
|
| 2 | 2SB1381 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 3 | 2SB1381 |
INCHANGE |
PNP Transistor |
|
| 4 | 2SB1382 |
Sanken electric |
Silicon PNP Transistor |
|
| 5 | 2SB1382 |
INCHANGE |
PNP Transistor |
|
| 6 | 2SB1382 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 7 | 2SB1386 |
Rohm |
Low Frequency Transistor |
|
| 8 | 2SB1386 |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor |
|
| 9 | 2SB1386 |
GME |
PNP Silicon Epitaxial Planar Transistor |
|
| 10 | 2SB1386 |
Power Silicon |
PNP GENERAL PURPOSE TRANSISTORS |
|
Desde 2024. D4U Semiconductor.
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