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2SB1386 |
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| Part Number | 2SB1386 |
| Manufacturer | GME |
| Description | Production specification PNP Silicon Epitaxial Planar Transistor FEATURES z Low VCE(sat)=-0.35V(Typ.) (IC/IB=-4A/-0.1A). Pb Lead-free z Excellent DC current gain characteristics. z Complementary:... |
| Features |
z Low VCE(sat)=-0.35V(Typ.) (IC/IB=-4A/-0.1A).
Pb
Lead-free
z Excellent DC current gain characteristics.
z Complementary: 2SD2098.
2SB1386
APPLICATIONS
z Low frequency transistor.
ORDERING INFORMATION
Type No.
Marking
2SB1386
BHP/BHQ/BHR
SOT-89
Package Code SOT-89
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
VCBO VCEO
Collector-Base Voltage Collector-Emitter Voltage
-30 -20
VEBO IC PC RθJA
Emitter-Base Voltage Collector Current
Collector Dissipation
-6
DC -5 Pulse -10
500
Thermal Resistance,,Junction-to- Ambient 300
RθJC
Thermal Resistance,J... |
| Document |
 2SB1386 Data Sheet
PDF 176.06KB |
Desde 2024. D4U Semiconductor.
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