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2SB1386 |
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| Part Number | 2SB1386 |
| Manufacturer | HOTTECH |
| Description | Plastic-Encapsulate Transistors FEATURES • Low collector saturation voltage, • Execllent current-to-gain characteristics 2SB1386 (PNP) Maximum Ratings (Ta=25 Parameter Collector-Base Voltage Collec... |
| Features |
• Low collector saturation voltage, • Execllent current-to-gain characteristics 2SB1386 (PNP) Maximum Ratings (Ta=25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power dissipation Junction Temperature Storage Temperature unless otherwise noted) Symbol Value VCBO -30 VCEO -20 VEBO -6 IC -5 PC 0.5 TJ 150 Tstg -55to +150 Unit V V V A W ELECTRICAL CHARACTERISTICS ( @ Ta=25 Parameter Symbol unless otherwise specified) Test conditions Collector-base breakdown voltage VCBO IC=-50μA,IE=0 Collector-emitter ... |
| Document |
 2SB1386 Data Sheet
PDF 185.52KB |
Desde 2024. D4U Semiconductor.
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