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2SB688 |
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| Part Number | 2SB688 |
| Manufacturer | First Silicon |
| Description | SEMICONDUCTOR TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR HIGH POWER AMPLIFIER APPLICATION FEATURES * Complementary to 2SD718. * Recommended for 45 ~ 50W Audio Frequency Amplifier Output Stage. 2SB688 1 TO-3P ABSOLUTE MAXIMUM RATINGS (Ta=25℃) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter Base Voltage Collector Current Base Current . |
| Features |
* Complementary to 2SD718. * Recommended for 45 ~ 50W Audio Frequency Amplifier Output Stage. 2SB688 1 TO-3P ABSOLUTE MAXIMUM RATINGS (Ta=25℃) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter Base Voltage Collector Current Base Current Collector Power Dissipation (TC=25℃) Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC IB PC TJ TSTG 1: BASE 2: COLLECTOR 3: EMITTER *Pb-free plating product number: 2SB688L RATINGS -120 -120 -5 -10 -1 80 150 -40 ~ +150 UNIT V V V A A W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃) PARAMETER Collector Cut-off Current Emi. |
| Datasheet |
 2SB688 Data Sheet
PDF 227.85KB |
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2SB688 |
| Part Number | 2SB688 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon PNP Power Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·Good Linearity of hFE ·Complement to Type 2SD718 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio frequency power amplifier applications ·Recommend for 45-50W audio frequency amplifi. |
| Features | R)CEO Collector-Emitter Breakdown Voltage IC= -50mA ; IB= 0 -120 V VCE(sat) Collector-Emitter Saturation Voltage IC= -5.0A; IB= -0.5A -2.5 V VBE(on) Base-Emitter On Voltage IC= -5A ; VCE= -5V -1.5 V ICBO Collector Cutoff Current VCB= -120V ; IE= 0 -10 μA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -10 μA hFE DC Current Gain IC= -1A ; VCE= -5V 55 160 COB Output Capacitance . |
2SB688 |
| Part Number | 2SB688 |
| Manufacturer | Toshiba |
| Title | Silicon PNP Transistor |
| Description | SILICON PNP TRIPLE DIFFUSED TYPE 2SB688 AUDIO FREQUENCY POWER AMPLIFIE R APPLICATIONS. FEATURES . Complementary to 2SD718. . Recommended for 45 ~50W auc io frequency amplif ier output stage. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Vol. |
| Features | . Complementary to 2SD718. . Recommended for 45 ~50W auc io frequency amplif ier output stage. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range SYMBOL VcBO VCEO VEBO ic IB PC Tj Tstg RATING -120 -120 -5 -8 -0.8 UNIT V . |
2SB688 |
| Part Number | 2SB688 |
| Manufacturer | Savantic |
| Title | Silicon PNP Power Transistors |
| Description | ·With TO-3P(I) package ·Complement to type 2SD718 APPLICATIONS ·Power amplifier applications ·Recommend for 45~50W audio frequency amplifier output stage PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-3P(I)) and symbol Absolute maxim. |
| Features | or-emitter saturation voltage IC=-5A; IB=-0.5A VBE Base-emitter voltage ICBO Collector cut-off current IEBO Emitter cut-off current hFE DC current gain IC=-5A ; VCE=-5V VCB=-120V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-5V fT Transition frequency IC=-1A ; VCE=-5V Cob Output capacitance IE=0 ; VCB=-10V ;f=1MHz MIN TYP. MAX UNIT -120 V -2.5 V -1.5 V -10 µA -10 µA 55 160 10 MHz 280 pF hFE C. |
2SB688 |
| Part Number | 2SB688 |
| Manufacturer | JCET |
| Title | PNP Transistor |
| Description | JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-3P Plastic-Encapsulate Transistors 2SB688 TRANSISTOR (PNP) FEATURES z High Breakdown Voltage z Complement to Type 2SD718 APPLICATIONS z Power Amplifier Applications TO – 3P 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwi. |
| Features |
z High Breakdown Voltage z Complement to Type 2SD718
APPLICATIONS z Power Amplifier Applications
TO – 3P 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient . |
2SB688 |
| Part Number | 2SB688 |
| Manufacturer | UTC |
| Title | SILICON PNP TRANSISTORS |
| Description | UTC 2SB688 PNP EPITAXIAL SILICON TRANSISTOR HIGH POWER AMPLIFIER APPLICATION FEATURES * Complementary to 2SD718. * Recommended for 45 ~ 50W Audio Frequency Amplifier Output Stage. 1 TO-3P 1: BASE 2: COLLECTOR 3: EMITTER *Pb-free plating product number: 2SB688L ABSOLUTE MAXIMUM RATINGS (Ta=25℃) . |
| Features | * Complementary to 2SD718. * Recommended for 45 ~ 50W Audio Frequency Amplifier Output Stage. 1 TO-3P 1: BASE 2: COLLECTOR 3: EMITTER *Pb-free plating product number: 2SB688L ABSOLUTE MAXIMUM RATINGS (Ta=25℃) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter Base Voltage Collector Current Base Current Collector Power Dissipation (TC=25℃) Junction Temperature Storage Temperature. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SB681 |
INCHANGE |
PNP Transistor |
|
| 2 | 2SB681 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 3 | 2SB682 |
INCHANGE |
PNP Transistor |
|
| 4 | 2SB683 |
INCHANGE |
PNP Transistor |
|
| 5 | 2SB686 |
INCHANGE |
PNP Transistor |
|
| 6 | 2SB686 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 7 | 2SB686 |
Toshiba |
SILICON PNP TRANSISTOR |
|
| 8 | 2SB689 |
INCHANGE |
PNP Transistor |
|
| 9 | 2SB689 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 10 | 2SB600 |
INCHANGE |
PNP Transistor |
|
Desde 2024. D4U Semiconductor.
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