Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
|---|
2SB857 |
| Part Number | 2SB857 |
| Manufacturer | UTC |
| Title | SILICON PNP TRANSISTOR |
| Description | Low frequency power amplifier. ORDERING INFORMATION Order Number Lead Free Halogen Free Package 2SB857L-x-T60-K 2SB857G-x-T60-K TO-126 2SB857L-x-T6C-K 2SB857G-x-T6C-K TO-126C 2SB857L-x-TA3-T 2SB857G-x-TA3-T TO-220 2SB857L-x-TF3-T 2SB857G-x-TF3-T TO-220F 2SB857L-x-TN3-R 2SB857G-x. |
| Features | V Emitter-Base Voltage VEBO -5 V Collector Current IC -4 A Collector Current (IC Peak) IC(PEAK) -8 A TO-126 TO-126C 10 W Total Power Dissipation (TC=25°C) TO-220 TO-220F PD 40 W 20 W TO-252 TO-252D 25 W Junction Temperature TJ +150 °C Storage Temperature TSTG -50 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently. |
2SB857 |
| Part Number | 2SB857 |
| Manufacturer | SavantIC |
| Title | (2SB857 / 2SB858) SILICON POWER TRANSISTOR |
| Description | ·With TO-220C package ·Complement to type 2SD1133/1134 APPLICATIONS ·Low frequency power amplifier PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings(Tc=25 ) SYMBOL VCBO PARAMETER Collector-base voltage 2SB857 VCEO Collector-emitter voltage 2SB8. |
| Features | IC=-0.5A ; VCE=-4V CONDITIONS SYMBOL 2SB857 2SB858 MIN -50 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage V -60 -70 -5 -1.0 -1.0 -1 60 35 15 MHz 320 V V V V µA V(BR)CBO V(BR)EBO VCEsat VBE ICBO hFE-1 hFE-2 fT Collector-base breakdown voltage Emitter-base breakdown votage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current DC current gain DC cu. |
2SB857 |
| Part Number | 2SB857 |
| Manufacturer | Renesas |
| Title | Silicon PNP Transistor |
| Description | To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations i. |
| Features | ee Datasheet http://www.datasheet4u.com/ Cautions Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration . |
2SB857 |
| Part Number | 2SB857 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon PNP Power Transistor |
| Description | ·Collector Current: IC= -4A ·Low Collector Saturation Voltage : VCE(sat)= -1.0V(Max)@IC= -2A ·High Collector Power Dissipation ·Complement to Type 2SD1133 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier app. |
| Features | 0mA ; RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA ; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A VBE(on) Base-Emitter On Voltage IC= -1A ; VCE= -4V ICBO Collector Cutoff Current VCB= -50V ; IE= 0 hFE-1 DC Current Gain IC= -1A ; VCE= -4V hFE-2 DC Current Gain IC= -0.1A ; VCE= -4V fT Cu. |
2SB857 |
| Part Number | 2SB857 |
| Manufacturer | Hitachi Semiconductor |
| Title | Silicon PNP Transistor |
| Description | 2SB857, 2SB858 Silicon PNP Triple Diffused Application Low frequency power amplifier complementary pair with 2SD1133 and 2SD1134 Outline TO-220AB 1 2 3 1. Base 2. Collector (Flange) 3. Emitter Absolute Maximum Ratings (Ta = 25°C) Ratings Item Collector to base voltage Collector to emitter volt. |
| Features |
V V µA Test conditions I C = –10 µA, IE = 0 I C = –50 mA, RBE = ∞ I E = –10 µA, IC = 0 VCB = –50 V, IE = 0 VCE = –4 V I C = –1 A*2 I C = –0.1 A*2 Min –70 –50 –5 — 60 35 — — — Typ — — — — — — — — 15 DC current transfer ratio hFE1* hFE2 Collector to emitter saturation voltage VCE(sat) I C = –2 A, IB = –0.2 A*2 VCE = –4 V, IC = –1 A*2 VCE = –4 V, I C = –0.5 A*2 Base to emitter voltage VBE Gain. |
2SB857 |
| Part Number | 2SB857 |
| Manufacturer | Dc Components |
| Title | PNP Transistor |
| Description | Designed for low frequency power amplifier. TO-220AB Pinning 1 = Base 2 = Collector 3 = Emitter .405(10.28) .380(9.66) .185(4.70) .173(4.40) Φ.151 Typ .055(1.39) Φ(3.83) .045(1.15) .295(7.49) .220(5.58) Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Volt. |
| Features | rature unless otherwise specified) Symbol BVCBO BVCEO BVEBO ICBO VCE(sat) VBE(on) hFE1 hFE2 fT 380µs, Duty Cycle 2% Min -70 -50 -5 35 60 - Typ 15 Max -1 -1 -1 320 - Unit V V V µA V V MHz Test Conditions IC=-10µA, IE=0 IC=-50mA, IB=0 IE=-10µA, IC=0 VCB=-50V, IE=0 IC=-2A, IB=-0.2A IC=-1A, VCE=-4V IC=-0.1A, VCE=-4V IC=-1A, VCE=-4V IC=-500mA, VCE=-4V, f=100MHz Collector-Base Breakdown Volatge C. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SB850 |
INCHANGE |
PNP Transistor |
|
| 2 | 2SB850 |
New Jersey Semi-Conductor |
GENERAL PURPOSE POWER AMPLIFIER |
|
| 3 | 2SB851 |
Rohm |
PNP Silicon Transistor |
|
| 4 | 2SB852 |
TY Semiconductor |
Transistor |
|
| 5 | 2SB852K |
Rohm |
High-gain Amplifier Transistor |
|
| 6 | 2SB855 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 7 | 2SB855 |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
| 8 | 2SB856 |
Hitachi Semiconductor |
Silicon PNP Transistor |
|
| 9 | 2SB856 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 10 | 2SB856 |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
Desde 2024. D4U Semiconductor.
|