2SB857 |
Part Number | 2SB857 |
Manufacturer | Hitachi Semiconductor |
Description | 2SB857, 2SB858 Silicon PNP Triple Diffused Application Low frequency power amplifier complementary pair with 2SD1133 and 2SD1134 Outline TO-220AB 1 2 3 1. Base 2. Collector (Flange) 3. Emitter A... |
Features |
V V µA Test conditions I C = –10 µA, IE = 0 I C = –50 mA, RBE = ∞ I E = –10 µA, IC = 0 VCB = –50 V, IE = 0 VCE = –4 V I C = –1 A*2 I C = –0.1 A*2 Min –70 –50 –5 — 60 35 — — — Typ — — — — — — — — 15 DC current transfer ratio hFE1* hFE2 Collector to emitter saturation voltage VCE(sat) I C = –2 A, IB = –0.2 A*2 VCE = –4 V, IC = –1 A*2 VCE = –4 V, I C = –0.5 A*2 Base to emitter voltage VBE Gain bandwidth product f T Notes: 1. The 2SB857 and 2SB858 are grouped by h FE1 as follows. 2. Pulse test B 60 to 120 C 100 to 200 D 160 to 320 Maximum Collector Dissipation Curve 60 Collector power dis... |
Document |
2SB857 Data Sheet
PDF 32.68KB |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2SB850 |
INCHANGE |
PNP Transistor | |
2 | 2SB850 |
New Jersey Semi-Conductor |
GENERAL PURPOSE POWER AMPLIFIER | |
3 | 2SB851 |
Rohm |
PNP Silicon Transistor | |
4 | 2SB852 |
TY Semiconductor |
Transistor | |
5 | 2SB852K |
Rohm |
High-gain Amplifier Transistor | |
6 | 2SB855 |
SavantIC |
SILICON POWER TRANSISTOR |