Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
|---|
2SB856 |
| Part Number | 2SB856 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon PNP Power Transistor |
| Description | ·Collector Current: IC= -3A ·Low Collector Saturation Voltage : VCE(sat)= -1.2V(Max)@IC= -2A ·High Collector Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM. |
| Features | ; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -5mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A VBE(on) Base-Emitter On Voltage IC= -1A; VCE= -4V ICBO Collector Cutoff Current VCB= -20V; IE= 0 hFE-1 DC Current Gain IC= -1A; VCE= -4V hFE-2 DC Current Gain IC= -0.1A; VCE= -4V fT Current-Gain—Bandwidth Product IC= -0.5A; VCE= -4V hFE-1 Classificat. |
2SB856 |
| Part Number | 2SB856 |
| Manufacturer | Hitachi Semiconductor |
| Title | Silicon PNP Transistor |
| Description | . |
| Features | . |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SB850 |
INCHANGE |
PNP Transistor |
|
| 2 | 2SB850 |
New Jersey Semi-Conductor |
GENERAL PURPOSE POWER AMPLIFIER |
|
| 3 | 2SB851 |
Rohm |
PNP Silicon Transistor |
|
| 4 | 2SB852 |
TY Semiconductor |
Transistor |
|
| 5 | 2SB852K |
Rohm |
High-gain Amplifier Transistor |
|
| 6 | 2SB855 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 7 | 2SB855 |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
| 8 | 2SB857 |
Hitachi Semiconductor |
Silicon PNP Transistor |
|
| 9 | 2SB857 |
UTC |
SILICON PNP TRANSISTOR |
|
| 10 | 2SB857 |
SavantIC |
(2SB857 / 2SB858) SILICON POWER TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
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