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2SB856 |
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| Part Number | 2SB856 |
| Manufacturer | Inchange Semiconductor |
| Description | ·Collector Current: IC= -3A ·Low Collector Saturation Voltage : VCE(sat)= -1.2V(Max)@IC= -2A ·High Collector Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable... |
| Features |
; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -5mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A
VBE(on) Base-Emitter On Voltage
IC= -1A; VCE= -4V
ICBO
Collector Cutoff Current
VCB= -20V; IE= 0
hFE-1
DC Current Gain
IC= -1A; VCE= -4V
hFE-2
DC Current Gain
IC= -0.1A; VCE= -4V
fT
Current-Gain—Bandwidth Product
IC= -0.5A; VCE= -4V
hFE-1 Classifications A B C 35-70 60-120 100-200 MIN TYP. MAX UNIT -50 V -50 V -4 V -1.2 V -1.5 V -100 μA 35 200 35 35 MHz NOTICE： ISC reserves the rights to make changes of the content herein th... |
| Document |
 2SB856 Data Sheet
PDF 217.04KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SB850 |
INCHANGE |
PNP Transistor |
|
| 2 | 2SB850 |
New Jersey Semi-Conductor |
GENERAL PURPOSE POWER AMPLIFIER |
|
| 3 | 2SB851 |
Rohm |
PNP Silicon Transistor |
|
| 4 | 2SB852 |
TY Semiconductor |
Transistor |
|
| 5 | 2SB852K |
Rohm |
High-gain Amplifier Transistor |
|
| 6 | 2SB855 |
SavantIC |
SILICON POWER TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
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