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2SB857 |
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| Part Number | 2SB857 |
| Manufacturer | Dc Components |
| Description | Designed for low frequency power amplifier. TO-220AB Pinning 1 = Base 2 = Collector 3 = Emitter .405(10.28) .380(9.66) .185(4.70) .173(4.40) Φ.151 Typ .055(1.39) Φ(3.83) .045(1.15) .295(7.49) .220(5... |
| Features |
rature unless otherwise specified)
Symbol BVCBO BVCEO BVEBO ICBO VCE(sat) VBE(on) hFE1 hFE2 fT 380µs, Duty Cycle 2%
Min -70 -50 -5 35 60 -
Typ 15
Max -1 -1 -1 320 -
Unit V V V µA V V MHz
Test Conditions IC=-10µA, IE=0 IC=-50mA, IB=0 IE=-10µA, IC=0 VCB=-50V, IE=0 IC=-2A, IB=-0.2A IC=-1A, VCE=-4V IC=-0.1A, VCE=-4V IC=-1A, VCE=-4V IC=-500mA, VCE=-4V, f=100MHz
Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Collector-Emitter Saturation Voltage(1) Base-Emitter On Voltage(1) DC Current Gain(1) Transition Frequency (1... |
| Document |
 2SB857 Data Sheet
PDF 211.66KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SB850 |
INCHANGE |
PNP Transistor |
|
| 2 | 2SB850 |
New Jersey Semi-Conductor |
GENERAL PURPOSE POWER AMPLIFIER |
|
| 3 | 2SB851 |
Rohm |
PNP Silicon Transistor |
|
| 4 | 2SB852 |
TY Semiconductor |
Transistor |
|
| 5 | 2SB852K |
Rohm |
High-gain Amplifier Transistor |
|
| 6 | 2SB855 |
SavantIC |
SILICON POWER TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
|