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2SB857 |
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| Part Number | 2SB857 |
| Manufacturer | UTC |
| Description | Low frequency power amplifier. ORDERING INFORMATION Order Number Lead Free Halogen Free Package 2SB857L-x-T60-K 2SB857G-x-T60-K TO-126 2SB857L-x-T6C-K 2SB857G-x-T6C-K TO-126C 2SB857L-x-T... |
| Features |
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current
IC
-4
A
Collector Current (IC Peak)
IC(PEAK)
-8
A
TO-126 TO-126C
10
W
Total Power Dissipation (TC=25°C)
TO-220 TO-220F
PD
40
W
20
W
TO-252 TO-252D
25
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-50 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL TEST... |
| Document |
 2SB857 Data Sheet
PDF 256.45KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SB850 |
INCHANGE |
PNP Transistor |
|
| 2 | 2SB850 |
New Jersey Semi-Conductor |
GENERAL PURPOSE POWER AMPLIFIER |
|
| 3 | 2SB851 |
Rohm |
PNP Silicon Transistor |
|
| 4 | 2SB852 |
TY Semiconductor |
Transistor |
|
| 5 | 2SB852K |
Rohm |
High-gain Amplifier Transistor |
|
| 6 | 2SB855 |
SavantIC |
SILICON POWER TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
|