Busque con el número de pieza junto con el fabricante o la descripción
2SB834 |
Click to view a larger image
| Part Number | 2SB834 |
| Manufacturer | Weitron Technology |
| Description | www.DataSheet.co.kr 2SB834 PNP Silicon Epitaxial Power Transistor P b Lead(Pb)-Free Features: * DC Current Gain hFE = 60-200 @IC = 0.5A * Low VCE(sat) ≤ 1.0V(MAX) @IC = 3.0A, IB = 0.3A * Complememtary to NPN 2SD880 COLLECTOR 2 BASE 1 1 2 3 3 EMITTER 1. BASE 2. COLLECTOR 3. EMITTER TO-220 Unit V V V A W W/˚C ˚C ˚C ABSOLUTE MAXIMUM RATINGS (TA=25ºC) Ratin. |
| Features |
* DC Current Gain hFE = 60-200 @IC = 0.5A * Low VCE(sat) ≤ 1.0V(MAX) @IC = 3.0A, IB = 0.3A * Complememtary to NPN 2SD880 COLLECTOR 2 BASE 1 1 2 3 3 EMITTER 1. BASE 2. COLLECTOR 3. EMITTER TO-220 Unit V V V A W W/˚C ˚C ˚C ABSOLUTE MAXIMUM RATINGS (TA=25ºC) Rating Collector to Base Voltage Collector to Emitter Voltage Collector to Base Voltage Collector Current Total Device Disspation TA=25°C TC=25°C Derate above 25°C Symbol VCBO VCEO VEBO IC PD TJ Tstg Value -60 -60 -7.0 -3.0 1.5 30 0.24 +150 -55 to +150 Junction Temperature Storage Temperature ELECTRICAL CHARACTERISTICS Characteristic. |
| Datasheet |
 2SB834 Data Sheet
PDF 225.59KB |
| Distributor | Stock | Price | Buy |
|---|
2SB834 |
| Part Number | 2SB834 |
| Manufacturer | Savantic |
| Title | Silicon PNP Power Transistors |
| Description | ·With TO-220 package ·Low collector saturation voltage ·Complement to type 2SD880 APPLICATIONS ·Audio frequency power amplifier PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PARAMETER Collector-base volt. |
| Features | f current DC current gain DC current gain Collector output capacitance Transition frequency CONDITIONS IC=-50mA ; IB=0 IC=-0.5A ; VCE=-5V IC=-3A;IB=-0.3A VCB=-60V;IE=0 VEB=-7V; IC=0 IC=-0.5A ; VCE=-5V IC=-3A ; VCE=-5V IE=0; VCB=-10V; f=1MHz IC=-0.5A ; VCE=-5V 60 20 MIN -60 SYMBOL V(BR) CEO VBE VCEsat ICBO IEBO hFE-1 hFE-2 Cob fT 2SB834 TYP. MAX UNIT V -0.7 -0.5 -1.0 -1.0 -0.1 -0.1 200 V V m. |
2SB834 |
| Part Number | 2SB834 |
| Manufacturer | Toshiba |
| Title | Silicon PNP Transistor |
| Description | : SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) 2SB834 AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. FEATURES C.3 MAX. Unit in mm 3.6±C • Low Collector Saturation Voltage •' Vce (sat) =-1-07 (Max.) at Ic=-3A, Ib=-0.3A . Collector Power Dissipation : P C =30W (Tc=25°C) . Complementary to 2SD880. |
| Features |
C.3 MAX.
Unit in mm
3.6±C
• Low Collector Saturation Voltage •' Vce (sat) =-1-07 (Max.) at Ic=-3A, Ib=-0.3A . Collector Power Dissipation : P C =30W (Tc=25°C) . Complementary to 2SD880. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -60 V Emitter-Base Voltage VEBO -7 V Collector Current ic -3 A Base. |
2SB834 |
| Part Number | 2SB834 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon PNP Power Transistors |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= -1.0V(Max) @IC= -3.0A ·Complementary to 2SD880 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in audio frequency pow. |
| Features | CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0 -60 V VCE(sat) Collector-Emitter Saturation Voltage IC= -3.0A; IB= -0.3A -1.0 V VBE(on) Base-Emitter On Voltage IC= -0.5A; VCE= -5V -1.0 V ICBO Collector Cutoff Current VCB= -60V; IE= 0 -100 μA IEBO Emitter Cutoff Current . |
2SB834 |
| Part Number | 2SB834 |
| Manufacturer | UTC |
| Title | HIGH VOLTAGE TRANSISTOR |
| Description | Low frequency power amplifier applications. PNP SILICON TRANSISTOR Lead-Free: 2SB834L Halogen Free: 2SB834G ORDERING INFORMATION Normal 2SB834-x-T60-K 2SB834-x-TA3-T 2SB834-x-TF3-T Ordering Number Lead Free 2SB834L-x-T60-K 2SB834L-x-TA3-T 2SB834L-x-TF3-T Halogen Free 2SB834G-x-T60-K 2SB834G-x-. |
| Features | tion Temperature TJ +125 °C Storage Temperature TSTG -40 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) SYMBOL BVCEO ICBO IEBO VCE(SAT) VBE(ON) hFE1 hFE2 fT TEST CONDITI. |
2SB834 |
| Part Number | 2SB834 |
| Manufacturer | TGS |
| Title | Transistor |
| Description | It is intented for use in power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS ( Ta = 25 OC) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Total Dissipation at Max. Operating Junction Temperature Symbol VCBO VCEO VEBO . |
| Features | t http://www.datasheet4u.com/ . |
2SB834 |
| Part Number | 2SB834 |
| Manufacturer | BLUE ROCKET ELECTRONICS |
| Title | Silicon PNP transistor |
| Description | TO-220 PNP 。Silicon PNP transistor in a TO-220 Plastic Package. / Features ，, 2SD880(BR3DD880R)。 Low collector saturation voltage, collector power dissipation, complementary to 2SD880(BR3DD880R). / Applications 。 Audio frequency power amplifier applications. / Equivalent Circuit / Pinning 1. |
| Features | ，, 2SD880(BR3DD880R)。 Low collector saturation voltage, collector power dissipation, complementary to 2SD880(BR3DD880R). / Applications 。 Audio frequency power amplifier applications. / Equivalent Circuit / Pinning 12 3 PIN1：Base PIN 2：Collector PIN 3：Emitter / hFE Classifications & Marking hFE Classifications Symbol hFE Range O 60～120 Y 100～200 GR 150～300 http://www.fsbrec.com 1/6. |
2SB834 |
| Part Number | 2SB834 |
| Manufacturer | SeCoS |
| Title | PNP Transistor |
| Description | Elektronische Bauelemente 2SB834 -3A , -60V PNP Plastic-Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Power switching applications CLASSIFICATION OF hFE Product-Rank 2SB834-O Range 60~120 2SB834-Y 100~200 ITO-220J BN MA D E H JC . |
| Features |
Power switching applications CLASSIFICATION OF hFE Product-Rank 2SB834-O Range 60~120 2SB834-Y 100~200 ITO-220J BN MA D E H JC Base Collector Emitter K LL G F REF. A B C D E F G Millimeter Min. Max. 14.80 15.60 9.50 10.50 13.00 REF. 4.30 4.70 2.50 3.20 2.40 2.90 0.30 0.75 REF. H J K L M N Millimeter Min. Max. 3.00 4.00 0.90 1.50 0.50 0.90 2.34 2.74 2.50 2.90 3.5 REF.. |
2SB834 |
| Part Number | 2SB834 |
| Manufacturer | GME |
| Title | PNP Epitaxial Silicon Transistor |
| Description | PNP Epitaxial Silicon Transistor FEATURES z Low Collector-Emitter Saturation Voltage. VCE(sat)=1V(Max)@IC=3A,IB=0.3A. z DC Current Gain HFE=60-200@IC=0.5A. z Complememtary to PNP 2SD880. Pb Lead-free Production specification 2SB834 TO-220AB MAXIMUM RATING operating temperature range applies unl. |
| Features | z Low Collector-Emitter Saturation Voltage. VCE(sat)=1V(Max)@IC=3A,IB=0.3A. z DC Current Gain HFE=60-200@IC=0.5A. z Complememtary to PNP 2SD880. Pb Lead-free Production specification 2SB834 TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Unit VCBO Collector-Base Voltage -60 V VCEO VEBO IC IB PC Tj,Tstg Collector-Emitter Volt. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SB831 |
Hitachi Semiconductor |
Silicon PNP Epitaxial Transistor |
|
| 2 | 2SB831 |
Renesas |
Silicon PNP Epitaxial Transistor |
|
| 3 | 2SB831 |
Kexin |
Transistor |
|
| 4 | 2SB831 |
TY Semiconductor |
Transistor |
|
| 5 | 2SB833 |
Toshiba |
SILICON PNP TRANSISTOR |
|
| 6 | 2SB834I |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor |
|
| 7 | 2SB800 |
NEC |
PNP SILICON EPITAXIAL TRANSISTOR |
|
| 8 | 2SB800 |
Kexin |
Transistor |
|
| 9 | 2SB800 |
TY Semiconductor |
Transistor |
|
| 10 | 2SB804 |
NEC |
PNP SILICON EPITAXIAL TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
|