Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
|---|
2SB1017 |
| Part Number | 2SB1017 |
| Manufacturer | SavantIC |
| Title | SILICON POWER TRANSISTOR |
| Description | ·With TO-220Fa package ·Complement to type 2SD1408 APPLICATIONS ·For power amplifications ·Recommended for 20-25W high-fidelity audio frequency amplifier output stage PINNING PIN 1 2 3 Emitter Collector Base DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PARAMETER Collecto. |
| Features | ter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=-50mA; IB=0 IC=-3A; IB=-0.3A IC=-3A ;VCE=-5V VCB=-80V; IE=0 VEB=-5V; IC=0 IC=-0.5A ; VCE=-5V IC=-3A ; VCE=-5V IC=-0.5A; VCE=-5V IE=0, f=1MHz ; VCB=-10V 40 15 MIN -80 2SB1017 SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT COB TYP. MAX UNIT V -1.0 -1.0 -1.7 -1.5 -30 -100 24. |
2SB1017 |
| Part Number | 2SB1017 |
| Manufacturer | Toshiba |
| Title | SILICON PNP TRANSISTOR |
| Description |
:
SILICON PNP TRIPLE DIFFUSED TYPE
2SB1017
POWER AMPLIFIER APPLICATIONS.
Unit in mm
FEATURES
. Good Linearity of hpE . Complementary to 2SD1408
. Recommended for 20 ~ 25W High-Fiderity iudio Frequency
Amplifier Output Stage.
10.3 MAX.
7.(D 03.2± |
| Features |
. Good Linearity of hpE . Complementary to 2SD1408
. Recommended for 20 ~ 25W High-Fiderity iudio Frequency
Amplifier Output Stage.
10.3 MAX.
7.(D 03.2± |
2SB1017 |
| Part Number | 2SB1017 |
| Manufacturer | INCHANGE |
| Title | PNP Transistor |
| Description | ·Low Collector Saturation Voltage- : VCE(sat)= -1.7V(Max)@IC= -3A ·Good Linearity of hFE ·Complement to Type 2SD1408 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications. ·Recommended for 20~25W high-fidelity aud. |
| Features | CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.3A VBE(on) Base-Emitter On Voltage IC= -3A; VCE= -5V ICBO Collector Cutoff Current VCB= -80V; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1 DC Current Gain IC= -0.5A; VCE= -5V hFE-2 DC Current Gain IC= -3A; VCE= -5V hFE-1 Classificati. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SB1010 |
Rohm |
PNP Silicon Transistor |
|
| 2 | 2SB1011 |
Panasonic Semiconductor |
Silicon PNP triple diffusion planar type Transistor |
|
| 3 | 2SB1012 |
Hitachi Semiconductor |
Silicon PNP Epitaxial Transistor |
|
| 4 | 2SB1012K |
Hitachi Semiconductor |
Silicon PNP Epitaxial Transistor |
|
| 5 | 2SB1015 |
Toshiba Semiconductor |
Silicon PNP Transistor |
|
| 6 | 2SB1015 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 7 | 2SB1015 |
INCHANGE |
PNP Transistor |
|
| 8 | 2SB1015A |
Toshiba Semiconductor |
Silicon PNP Transistor |
|
| 9 | 2SB1016 |
Toshiba |
SILICON PNP TRANSISTOR |
|
| 10 | 2SB1016 |
SavantIC |
SILICON POWER TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
|