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2SB1017 |
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| Part Number | 2SB1017 |
| Manufacturer | INCHANGE |
| Description | ·Low Collector Saturation Voltage- : VCE(sat)= -1.7V(Max)@IC= -3A ·Good Linearity of hFE ·Complement to Type 2SD1408 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation... |
| Features |
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.3A
VBE(on) Base-Emitter On Voltage
IC= -3A; VCE= -5V
ICBO
Collector Cutoff Current
VCB= -80V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE-1
DC Current Gain
IC= -0.5A; VCE= -5V
hFE-2
DC Current Gain
IC= -3A; VCE= -5V
hFE-1 Classifications R O Y 40-80 70-140 120-240 2SB1017 MIN TYP. MAX UNIT -80 V -1.7 V -1.5 V -30 μA -0.1 mA 40 240 15 NOTICE： ISC reserves the rights to make changes of the content herein the datashee... |
| Document |
 2SB1017 Data Sheet
PDF 213.19KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SB1010 |
Rohm |
PNP Silicon Transistor |
|
| 2 | 2SB1011 |
Panasonic Semiconductor |
Silicon PNP triple diffusion planar type Transistor |
|
| 3 | 2SB1012 |
Hitachi Semiconductor |
Silicon PNP Epitaxial Transistor |
|
| 4 | 2SB1012K |
Hitachi Semiconductor |
Silicon PNP Epitaxial Transistor |
|
| 5 | 2SB1015 |
Toshiba Semiconductor |
Silicon PNP Transistor |
|
| 6 | 2SB1015 |
SavantIC |
SILICON POWER TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
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