| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
Harris Corporation |
N-Channel MOSFET |
|
|
|
|
Harris |
N-Channel Power MOSFETs • 2.2A and 2.5A, 450V and 500V • rDS(ON) = 3.0Ω and 4.0Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Gui |
|
|
|
|
Harris |
N-Channel Power MOSFETs • 2.2A and 2.5A, 450V and 500V • rDS(ON) = 3.0Ω and 4.0Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Gui |
|
|
|
|
Harris |
N-Channel Power MOSFETs • 2.2A and 2.5A, 450V and 500V • rDS(ON) = 3.0Ω and 4.0Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Gui |
|
|
|
|
Harris |
N-Channel Power MOSFETs • 2.2A and 2.5A, 450V and 500V • rDS(ON) = 3.0Ω and 4.0Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Gui |
|
|
|
|
Harris |
N-Channel Power MOSFETs • 28A and 25A, 80V and 100V • rDS(ON) = 0.077Ω and 0.100Ω • Single Pulse Avalanche Energy Rated • SOA is Power-Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device Descr |
|
|
|
|
Harris |
N-Channel Power MOSFETs • 2.8A and 3.3A, 350V and 400V • rDS(ON) = 1.8Ω and 2.5Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device • Relat |
|
|
|
|
Harris |
N-Channel Power MOSFETs • 28A and 25A, 80V and 100V • rDS(ON) = 0.077Ω and 0.100Ω • Single Pulse Avalanche Energy Rated • SOA is Power-Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device Descr |
|
|
|
|
HARRIS |
N-Channel Power MOSFET |
|
|
|
|
Harris |
N-Channel Power MOSFETs • 4.0A and 5.0A, 150V and 200V • rDS(ON) = 0.8Ω and 1.2Ω • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device • Related Literature - TB334 “Guidelines for |
|
|
|
|
Harris |
N-Channel Power MOSFETs • 4.0A and 5.0A, 150V and 200V • rDS(ON) = 0.8Ω and 1.2Ω • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device • Related Literature - TB334 “Guidelines for |
|
|
|
|
Harris Corporation |
P-Channel MOSFET Description • -15A and -19A, -80V and -100V • rDS(ON) = 0.20Ω and 0.30Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Litera |
|
|
|
|
Harris Corporation |
P-Channel MOSFET Description • -15A and -19A, -80V and -100V • rDS(ON) = 0.20Ω and 0.30Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Litera |
|
|
|
|
Harris Corporation |
(IRF510 - IRF513) N-Channel Power MOSFETs • 4.9A, and 5.6A, 80V and 100V • rDS(ON) = 0.54Ω and 0.74Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “G |
|
|
|
|
Harris Corporation |
(IRF510 - IRF513) N-Channel Power MOSFETs • 4.9A, and 5.6A, 80V and 100V • rDS(ON) = 0.54Ω and 0.74Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “G |
|
|
|
|
Harris |
N-Channel Power MOSFETs • 34A and 40A, 60V and 100V • rDS(ON) = 0.055Ω and 0.08Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Gui |
|
|
|
|
Harris Corporation |
N-Channel Power MOSFET |
|
|
|
|
Harris |
N-Channel Power MOSFETs • 6.2A and 5.4A, 600V • rDS(ON) = 1.2Ω and 1.6Ω • Repetitive Avalanche Energy Rated • Simple Drive Requirements • Ease of Paralleling • Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information |
|
|
|
|
Harris |
N-Channel Power MOSFETs • 25A and 28A, 80V and 100V • rDS(ON) = 0.077Ω and 0.100Ω • Single Pulse Avalanche Energy Rated • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for Soldering Surface Moun |
|
|
|
|
Harris |
N-Channel Power MOSFETs • 28A and 25A, 80V and 100V • rDS(ON) = 0.077Ω and 0.100Ω • Single Pulse Avalanche Energy Rated • SOA is Power-Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device Descr |
|
Desde 2024. D4U Semiconductor.
|