Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
|---|
IRF530 |
| Part Number | IRF530 |
| Manufacturer | STMicroelectronics |
| Title | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
| Description | This MOSFET series realized with STMicroelectronics cunique STripFET™ process has specifically been udesigned to minimize input capacitance and gate charge. dIt is therefore suitable as primary switch in advanced rohigh-efficiency, high-frequency isolated DC-DC converters for Telecom and Computer ap. |
| Features |
Drain-source Voltage (VGS = 0)
teVDGR
Drain-gate Voltage (RGS = 20 kΩ)
leVGS Gate- source Voltage
soID Drain Current (continuous) at TC = 25°C
Ob ID Drain Current (continuous) at TC = 100°C
2 1
TO-220
INTERNAL SCHEMATIC DIAGRAM
Value 100 100 ± 20 14 10
Unit V V V A A
IDM( •) Drain Current (pulsed) 56 A Ptot Total Dissipation at TC = 25°C 60 W Derating Factor 0.4 W/°C dv/dt (1) Peak D. |
IRF530 |
| Part Number | IRF530 |
| Manufacturer | Fairchild Semiconductor |
| Title | N-Channel Power MOSFET |
| Description | Data Sheet IRF530 February 2002 [ /Title (IRF53 0, RF1S5 30SM) /Subject (14A, 100V, 0.160 Ohm, NChannel Power MOSFETs) /Autho r () /Keywords (14A, 100V, 0.160 Ohm, NChannel Power MOSFETs, Intersil Corporation, TO220AB , TO263AB 14A, 100V, 0.160 Ohm, N-Channel Power MOSFETs These are N-Channel enh. |
| Features |
• 14A, 100V • rDS(ON) = 0.160Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D G S Packaging JEDEC TO-220AB DRAIN (FLANGE) SOURCE DRAIN GATE ©2002 Fairchild Semiconductor Corpo. |
IRF530 |
| Part Number | IRF530 |
| Manufacturer | Inchange Semiconductor |
| Title | N-Channel MOSFET Transistor |
| Description | isc N-Channel Mosfet Transistor INCHANGE Semiconductor IRF530 FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugged ·Low Drive Requirements ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed especially for h. |
| Features |
·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugged ·Low Drive Requirements ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) . |
IRF530 |
| Part Number | IRF530 |
| Manufacturer | Vishay |
| Title | Power MOSFET |
| Description | Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to app. |
| Features |
• Dynamic dV/dt rating • Repetitive avalanche rated Available • 175 °C operating temperature • Fast switching Available • Ease of paralleling • Simple drive requirements Available • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compli. |
IRF530 |
| Part Number | IRF530 |
| Manufacturer | International Rectifier |
| Title | Power MOSFET |
| Description | . |
| Features | . |
IRF530 |
| Part Number | IRF530 |
| Manufacturer | ON Semiconductor |
| Title | Power Field Effect Transistor |
| Description | IRF530 Product Preview TMOS E−FET.™ Power Field Effect Transistor N−Channel Enhancement−Mode Silicon Gate This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain−to−source diode with a fast recover. |
| Features | ing Symbol Drain−to−Source Voltage Drain−to−Gate Voltage (RGS = 1.0 MΩ) Gate−to−Source Voltage — Continuous Gate−to−Source Voltage — Single Pulse (tp ≤ 50 mS) Drain Current — Continuous Drain Current — Continuous @ 100°C Drain Current — Single Pulse (tp ≤ 10 mS) Total Power Dissipation @ TC = 25°C Derate above 25°C VDSS VDGR VGS VGSM ID ID IDM PD Operating and Storage Temperature Range TJ, Ts. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRF5305 |
International Rectifier |
Power MOSFET |
|
| 2 | IRF5305 |
INCHANGE |
P-Channel MOSFET |
|
| 3 | IRF5305L |
International Rectifier |
Power MOSFET |
|
| 4 | IRF5305L |
INCHANGE |
P-Channel MOSFET |
|
| 5 | IRF5305LPBF |
International Rectifier |
HEXFET Power MOSFET |
|
| 6 | IRF5305PbF |
International Rectifier |
Power MOSFET |
|
| 7 | IRF5305S |
International Rectifier |
Power MOSFET |
|
| 8 | IRF5305S |
INCHANGE |
P-Channel MOSFET |
|
| 9 | IRF5305SPBF |
International Rectifier |
HEXFET Power MOSFET |
|
| 10 | IRF530A |
Fairchild Semiconductor |
Advanced Power MOSFET |
|
Desde 2024. D4U Semiconductor.
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