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IRF530 |
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| Part Number | IRF530 |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | IRF530 Product Preview TMOS E−FET.™ Power Field Effect Transistor N−Channel Enhancement−Mode Silicon Gate This advanced TMOS power FET is designed to withstand high energy in the avalanche and commuta... |
| Features |
ing
Symbol
Drain−to−Source Voltage
Drain−to−Gate Voltage (RGS = 1.0 MΩ)
Gate−to−Source Voltage — Continuous Gate−to−Source Voltage — Single Pulse (tp ≤ 50 mS)
Drain Current — Continuous Drain Current — Continuous @ 100°C Drain Current — Single Pulse (tp ≤ 10 mS)
Total Power Dissipation @ TC = 25°C Derate above 25°C
VDSS VDGR VGS VGSM
ID ID IDM PD
Operating and Storage Temperature Range
TJ, Tstg
UNCLAMPED DRAIN−TO−SOURCE AVALANCHE CHARACTERISTICS (TJ < 150°C)
Single Pulse Drain−to−Source Avalanche Energy — STARTING TJ = 25°C (VDD = 75 V, VGS = 10 V, PEAK IL = 14 A, L = 1.0 mH, RG = 25 W)... |
| Document |
 IRF530 Data Sheet
PDF 183.34KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRF530 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 2 | IRF530 |
Motorola Inc |
N-Channel MOSFET |
|
| 3 | IRF530 |
STMicroelectronics |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
|
| 4 | IRF530 |
International Rectifier |
Power MOSFET |
|
| 5 | IRF530 |
Fairchild Semiconductor |
N-Channel Power MOSFET |
|
| 6 | IRF530 |
Harris Corporation |
N-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
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