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IRF530 |
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| Part Number | IRF530 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This MOSFET series realized with STMicroelectronics cunique STripFET™ process has specifically been udesigned to minimize input capacitance and gate charge. dIt is therefore suitable as primary switch... |
| Features |
Drain-source Voltage (VGS = 0)
teVDGR
Drain-gate Voltage (RGS = 20 kΩ)
leVGS Gate- source Voltage
soID Drain Current (continuous) at TC = 25°C
Ob ID Drain Current (continuous) at TC = 100°C
2 1
TO-220
INTERNAL SCHEMATIC DIAGRAM
Value 100 100 ± 20 14 10
Unit V V V A A
IDM( •) Drain Current (pulsed) 56 A Ptot Total Dissipation at TC = 25°C 60 W Derating Factor 0.4 W/°C dv/dt (1) Peak Diode Recovery voltage slope 20 V/ns EAS (2) Single Pulse Avalanche Energy 70 mJ Tstg Storage Temperature Tj Operating Junction Temperature ( •) Pulse width limited by safe operating area. August 20... |
| Document |
 IRF530 Data Sheet
PDF 297.06KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRF530 |
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| 2 | IRF530 |
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| 3 | IRF530 |
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| 4 | IRF530 |
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| 5 | IRF530 |
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| 6 | IRF530 |
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Desde 2024. D4U Semiconductor.
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