Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
|---|
IRF5305 |
| Part Number | IRF5305 |
| Manufacturer | International Rectifier |
| Title | Power MOSFET |
| Description | Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer . |
| Features | EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRF530 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 2 | IRF530 |
Motorola Inc |
N-Channel MOSFET |
|
| 3 | IRF530 |
STMicroelectronics |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
|
| 4 | IRF530 |
International Rectifier |
Power MOSFET |
|
| 5 | IRF530 |
Fairchild Semiconductor |
N-Channel Power MOSFET |
|
| 6 | IRF530 |
Harris Corporation |
N-Channel MOSFET |
|
| 7 | IRF530 |
Vishay |
Power MOSFET |
|
| 8 | IRF530 |
ON Semiconductor |
Power Field Effect Transistor |
|
| 9 | IRF5305L |
International Rectifier |
Power MOSFET |
|
| 10 | IRF5305L |
INCHANGE |
P-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
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