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| Distributor | Stock | Price | Buy |
|---|
IRF5305S |
| Part Number | IRF5305S |
| Manufacturer | INCHANGE |
| Title | P-Channel MOSFET |
| Description | isc P-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤60mΩ(@VGS= -10V; ID= -16A) ·Advanced trench process technology ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Fast switching application. . |
| Features |
·Static drain-source on-resistance: RDS(on)≤60mΩ(@VGS= -10V; ID= -16A) ·Advanced trench process technology ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Fast switching application. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage -55 VGS Gate-Source Voltage ±20 ID Drain Current. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRF5305 |
International Rectifier |
Power MOSFET |
|
| 2 | IRF5305 |
INCHANGE |
P-Channel MOSFET |
|
| 3 | IRF5305L |
International Rectifier |
Power MOSFET |
|
| 4 | IRF5305L |
INCHANGE |
P-Channel MOSFET |
|
| 5 | IRF5305LPBF |
International Rectifier |
HEXFET Power MOSFET |
|
| 6 | IRF5305PbF |
International Rectifier |
Power MOSFET |
|
| 7 | IRF5305SPBF |
International Rectifier |
HEXFET Power MOSFET |
|
| 8 | IRF530 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 9 | IRF530 |
Motorola Inc |
N-Channel MOSFET |
|
| 10 | IRF530 |
STMicroelectronics |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
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