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IRF5305S |
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| Part Number | IRF5305S |
| Manufacturer | INCHANGE |
| Description | isc P-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤60mΩ(@VGS= -10V; ID= -16A) ·Advanced trench process technology ·100% avalanche tested ·Minimum Lot-to-Lot variati... |
| Features |
·Static drain-source on-resistance: RDS(on)≤60mΩ(@VGS= -10V; ID= -16A) ·Advanced trench process technology ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Fast switching application. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage -55 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 31 PD Total Dissipation @TC=25℃ 110 Tj Max. Operating Junction Temperature -55~175 Tstg Storage Temperature -55~175 UNIT V V A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER... |
| Document |
 IRF5305S Data Sheet
PDF 248.55KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRF5305 |
International Rectifier |
Power MOSFET |
|
| 2 | IRF5305 |
INCHANGE |
P-Channel MOSFET |
|
| 3 | IRF5305L |
International Rectifier |
Power MOSFET |
|
| 4 | IRF5305L |
INCHANGE |
P-Channel MOSFET |
|
| 5 | IRF5305LPBF |
International Rectifier |
HEXFET Power MOSFET |
|
| 6 | IRF5305PbF |
International Rectifier |
Power MOSFET |
|
Desde 2024. D4U Semiconductor.
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