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IRF512 N-Channel Power MOSFET

IRF512


IRF512
Part Number IRF512
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IRF512

Inchange Semiconductor
IRF512
Part Number IRF512
Manufacturer Inchange Semiconductor
Title N-Channel MOSFET Transistor
Description INCHANGE Semiconductor isc N-Channel Mosfet Transistor ·FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugged ·Low Drive Requirements isc Product Specification IRF512 ·DESCRITION ·Designed especially for high voltage,high speed applications, such as off-line switc.
Features
·Low RDS(on)
·VGS Rated at ±20V
·Silicon Gate for Fast Switching Speed
·Rugged
·Low Drive Requirements isc Product Specification IRF512
·DESCRITION
·Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-So.

IRF512

Harris Corporation
IRF512
Part Number IRF512
Manufacturer Harris Corporation
Title (IRF510 - IRF513) N-Channel Power MOSFETs
Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as swi.
Features
• 4.9A, and 5.6A, 80V and 100V
• rDS(ON) = 0.54Ω and 0.74Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Ordering Information PART NUMBER IRF510 IRF511 IRF512 IRF513 PACKAGE TO-220A.

IRF512

Supertex  Inc
IRF512
Part Number IRF512
Manufacturer Supertex Inc
Title N-Channel Enhancement-Mode Vertical DMOS Power FET
Description .
Features .

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