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IRF510 N-Channel MOSFET Transistor

IRF510


IRF510
Part Number IRF510
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IRF510

Fairchild Semiconductor
IRF510
Part Number IRF510
Manufacturer Fairchild Semiconductor
Title N-Channel Power MOSFET
Description Data Sheet January 2002 IRF510 5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation..
Features
• 5.6A, 100V
• rDS(ON) = 0.540Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D G S Packaging JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) ©2002 Fairchild Semiconductor Corpo.

IRF510

Vishay
IRF510
Part Number IRF510
Manufacturer Vishay
Title Power MOSFET
Description Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to app.
Features
• Dynamic dV/dt rating
• Repetitive avalanche rated Available
• 175 °C operating temperature
• Fast switching Available
• Ease of paralleling
• Simple drive requirements Available
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compli.

IRF510

International Rectifier
IRF510
Part Number IRF510
Manufacturer International Rectifier
Title Power MOSFET
Description .
Features .

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