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IRF510 |
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| Part Number | IRF510 |
| Manufacturer | Fairchild Semiconductor |
| Description | Data Sheet January 2002 IRF510 5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, ... |
| Features |
• 5.6A, 100V • rDS(ON) = 0.540Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D G S Packaging JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) ©2002 Fairchild Semiconductor Corporation IRF510 Rev. B IRF510 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ... |
| Document |
 IRF510 Data Sheet
PDF 90.67KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRF510 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 2 | IRF510 |
Vishay |
Power MOSFET |
|
| 3 | IRF510 |
International Rectifier |
Power MOSFET |
|
| 4 | IRF510A |
Fairchild Semiconductor |
Advanced Power MOSFET |
|
| 5 | IRF510PBF |
International Rectifier |
HEXFET POWER MOSFET |
|
| 6 | IRF510S |
International Rectifier |
Power MOSFET |
|
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