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IRF512 |
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| Part Number | IRF512 |
| Manufacturer | Inchange Semiconductor |
| Description | INCHANGE Semiconductor isc N-Channel Mosfet Transistor ·FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugged ·Low Drive Requirements isc Product Specification IRF51... |
| Features |
·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugged ·Low Drive Requirements isc Product Specification IRF512 ·DESCRITION ·Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 100 ±20 V V ID Drain Current-Continuous 4.9 A IDM Drain Current-Single Plused 18 A PD Total Dissipation @TC=25℃ 43 W Tj Max. Operating Junction Tem... |
| Document |
 IRF512 Data Sheet
PDF 39.30KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRF510 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 2 | IRF510 |
Fairchild Semiconductor |
N-Channel Power MOSFET |
|
| 3 | IRF510 |
Vishay |
Power MOSFET |
|
| 4 | IRF510 |
International Rectifier |
Power MOSFET |
|
| 5 | IRF510A |
Fairchild Semiconductor |
Advanced Power MOSFET |
|
| 6 | IRF510PBF |
International Rectifier |
HEXFET POWER MOSFET |
|
Desde 2024. D4U Semiconductor.
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