Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
|---|
IRF222 |
| Part Number | IRF222 |
| Manufacturer | Harris |
| Title | N-Channel Power MOSFETs |
| Description | These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as swi. |
| Features |
• 4.0A and 5.0A, 150V and 200V • rDS(ON) = 0.8Ω and 1.2Ω • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER PACKAGE BRAND IRF220 TO-204AA IRF220 IRF221 TO-204AA IRF22. |
IRF222 |
| Part Number | IRF222 |
| Manufacturer | Intersil Corporation |
| Title | N-Channel Power MOSFET |
| Description | These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as swi. |
| Features |
• 4.0A and 5.0A, 150V and 200V • rDS(ON) = 0.8Ω and 1.2Ω • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Ordering Information PART NUMBER IRF220 IRF221 IRF222 IRF223 PACKAGE TO-204AA TO-204AA TO-. |
IRF222 |
| Part Number | IRF222 |
| Manufacturer | Inchange Semiconductor |
| Title | N-Channel MOSFET Transistor |
| Description | ·Drain Current ID=4A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) =1.2Ω(Max) ·High Speed Applications APPLICATIONS ·Switching power supplies ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Volta. |
| Features | (BR)DSS Drain-Source Breakdown Voltage VGS=0; ID=250µA VGS(TH) Gate Threshold Voltage VDS= VGS; ID=250µA RDS(ON) Drain-Source On-stage Resistance VGS=10V; ID=2.5A IGSS Gate Source Leakage Current VGS=±20V;VDS=0 IDSS Zero Gate Voltage Drain Current VDS=200V; VGS=0 VSD Diode Forward Voltage IS=4A; VGS=0 Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance VDS=25. |
IRF222 |
| Part Number | IRF222 |
| Manufacturer | Fairchild Semiconductor |
| Title | N-Channel Power MOSFET |
| Description | . |
| Features | . |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRF220 |
Samsung semiconductor |
N-Channel Power MOSFET |
|
| 2 | IRF220 |
Intersil Corporation |
N-Channel Power MOSFET |
|
| 3 | IRF220 |
Fairchild Semiconductor |
N-Channel Power MOSFET |
|
| 4 | IRF220 |
Harris |
N-Channel Power MOSFETs |
|
| 5 | IRF220 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 6 | IRF2204 |
International Rectifier |
AUTOMOTIVE MOSFET |
|
| 7 | IRF2204 |
INCHANGE |
N-Channel MOSFET |
|
| 8 | IRF2204L |
International Rectifier |
Power MOSFET |
|
| 9 | IRF2204PBF |
International Rectifier |
Power MOSFET |
|
| 10 | IRF2204S |
International Rectifier |
Power MOSFET |
|
Desde 2024. D4U Semiconductor.
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