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IRF822 |
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| Part Number | IRF822 |
| Manufacturer | Inchange Semiconductor |
| Description | ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 500 ±20 V V ID Drain Current-Continuous 2.0 A IDM Drain Current-Single Pluse 7A PD Total Dissipation @TC=25℃ 50 W TJ Max. Operating Junction. |
| Features |
·Lower Input Capacitance ·Improved Gate Charge ·Extended Safe Operating Area ·Rugged Gate Oxide Technology DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 500 ±20 V V ID Drain Current-Continuous 2.0 A IDM Drain Current-Single Pluse 7A PD Total Dissipation @TC=25℃ 50 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Rth j-. |
| Datasheet |
 IRF822 Data Sheet
PDF 61.03KB |
| Distributor | Stock | Price | Buy |
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IRF822 |
| Part Number | IRF822 |
| Manufacturer | Harris |
| Title | N-Channel Power MOSFETs |
| Description | These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as swi. |
| Features |
• 2.2A and 2.5A, 450V and 500V • rDS(ON) = 3.0Ω and 4.0Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol Ordering Information D PART NUMBER IRF820 IRF821 IRF822 IRF823 PACKAGE TO-220AB. |
IRF822 |
| Part Number | IRF822 |
| Manufacturer | Samsung semiconductor |
| Title | N-Channel Power MOSFET |
| Description | . |
| Features | . |
IRF822 |
| Part Number | IRF822 |
| Manufacturer | STMicroelectronics |
| Title | (IRF820 / IRF822) N-Channel Enhancement Mode Power MOS Transistors |
| Description | Free Datasheet http://www.datasheet4u.com/ Free Datasheet http://www.datasheet4u.com/ Free Datasheet http://www.datasheet4u.com/ Free Datasheet http://www.datasheet4u.com/ Free Datasheet http://www.datasheet4u.com/ Free Datasheet http://www.datasheet4u.com/ . |
| Features | . |
IRF822 |
| Part Number | IRF822 |
| Manufacturer | Fairchild Semiconductor |
| Title | N-Channel Power MOSFET |
| Description | . |
| Features | . |
IRF822 |
| Part Number | IRF822 |
| Manufacturer | ART CHIP |
| Title | N-Channel Power MOSFET |
| Description | These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers and other pulse circuits. z Low RDS(on) z VGS Rated at ±20V z Silicon Gate for Fast Switchi. |
| Features | e, refer to Section 7. ID at Tc=100¥ 1.5A 1.5A 1.0A 1.0A 1.5A 1.5A 1.0A 1.0A 2.0A 2.0A Case Style TO-204AA TO-220AB www.artschip.com 1 IRF420-423/IRF820-823 MTP2N45/2N50 N-Channel Power MOSFETs 3.0A, 450V/500V Maximum Ratings Symbol Characteristic VDSS VDGR VGS TJ, Tstg TL Drain to Source Voltage 1 Drain to Gate Voltage 1 RGS=20kΩ Gate to Source Voltage Operating Junction and Storage Te. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRF820 |
ART CHIP |
N-Channel Power MOSFET |
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| 2 | IRF820 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
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| 3 | IRF820 |
Motorola Inc |
Power MOSFET |
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| 4 | IRF820 |
STMicroelectronics |
N-CHANNEL MOSFET |
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| 5 | IRF820 |
Intersil Corporation |
N-Channel Power MOSFET |
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| 6 | IRF820 |
International Rectifier |
Power MOSFET |
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| 7 | IRF820 |
Fairchild Semiconductor |
N-Channel Power MOSFET |
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| 8 | IRF820 |
Harris |
N-Channel Power MOSFETs |
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| 9 | IRF820 |
Vishay |
Power MOSFET |
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| 10 | IRF820A |
International Rectifier |
Power MOSFET |
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Desde 2024. D4U Semiconductor.
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