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IRF820 |
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| Part Number | IRF820 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWE. |
| Features |
d) Total Dissipation at Tc = 25 C Derating F actor Peak Diode Recovery voltage slope Storage T emperature Max. O perating Junction Temperature
o o o
Value 500 500 ± 20 2.5 1.6 10 80 0.64 3.5 -65 to 150 150
Uni t V V V A A A W W/ C V/ ns
o o o
C C
( •) Pulse width limited by safe operating area (1) ISD ≤ 2.5 A, di/dt ≤ 50 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX First Digit of the Datecode Being Z or K Identifies Silicon Characterized in this Datasheet August 1998 1/8 IRF820 THERMAL DATA R t hj-ca se Rthj -amb R thc- si nk Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambi. |
| Datasheet |
 IRF820 Data Sheet
PDF 268.90KB |
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IRF820 |
| Part Number | IRF820 |
| Manufacturer | Inchange Semiconductor |
| Title | N-Channel MOSFET Transistor |
| Description | ·Drain Current –ID= 2.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3Ω(Max) ·Fast Switching Speed ·Simple Drive Requirements ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High current,high speed. |
| Features |
ebsite：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IRF820
·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA VGS(th) Gate Threshold Voltage VDS= VGS; ID= 0.25mA RDS(on) Drain-Source On-stage Resistance VGS= 10V; ID= 1.5A IGSS Gate Source Leakage C. |
IRF820 |
| Part Number | IRF820 |
| Manufacturer | Harris |
| Title | N-Channel Power MOSFETs |
| Description | These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as swi. |
| Features |
• 2.2A and 2.5A, 450V and 500V • rDS(ON) = 3.0Ω and 4.0Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol Ordering Information D PART NUMBER IRF820 IRF821 IRF822 IRF823 PACKAGE TO-220AB. |
IRF820 |
| Part Number | IRF820 |
| Manufacturer | Fairchild Semiconductor |
| Title | N-Channel Power MOSFET |
| Description | . |
| Features | . |
IRF820 |
| Part Number | IRF820 |
| Manufacturer | Intersil Corporation |
| Title | N-Channel Power MOSFET |
| Description | IRF820 Data Sheet July 1999 File Number 1581.4 2.5A, 500V, 3.000 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode. |
| Features |
• 2.5A, 500V • rDS(ON) = 3.000Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER IRF820 PACKAGE TO-220AB BRAND IRF820 Symbol D NOTE: When ordering, use the ent. |
IRF820 |
| Part Number | IRF820 |
| Manufacturer | International Rectifier |
| Title | Power MOSFET |
| Description | . |
| Features | . |
IRF820 |
| Part Number | IRF820 |
| Manufacturer | ART CHIP |
| Title | N-Channel Power MOSFET |
| Description | These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers and other pulse circuits. z Low RDS(on) z VGS Rated at ±20V z Silicon Gate for Fast Switchi. |
| Features | e, refer to Section 7. ID at Tc=100¥ 1.5A 1.5A 1.0A 1.0A 1.5A 1.5A 1.0A 1.0A 2.0A 2.0A Case Style TO-204AA TO-220AB www.artschip.com 1 IRF420-423/IRF820-823 MTP2N45/2N50 N-Channel Power MOSFETs 3.0A, 450V/500V Maximum Ratings Symbol Characteristic VDSS VDGR VGS TJ, Tstg TL Drain to Source Voltage 1 Drain to Gate Voltage 1 RGS=20kΩ Gate to Source Voltage Operating Junction and Storage Te. |
IRF820 |
| Part Number | IRF820 |
| Manufacturer | Vishay |
| Title | Power MOSFET |
| Description | Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for commercial-industrial applications at power dissipation levels to appro. |
| Features |
• Dynamic dV/dt rating • Repetitive avalanche rated • Fast switching Available • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations a. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRF820A |
International Rectifier |
Power MOSFET |
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| 2 | IRF820A |
Vishay |
Power MOSFET |
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| 3 | IRF820AL |
International Rectifier |
Power MOSFET |
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| 4 | IRF820AL |
Vishay |
Power MOSFET |
|
| 5 | IRF820ALPBF |
International Rectifier |
HEXFET Power MOSFET |
|
| 6 | IRF820APBF |
International Rectifier |
HEXFET Power MOSFET |
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| 7 | IRF820AS |
International Rectifier |
Power MOSFET |
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| 8 | IRF820AS |
Vishay |
Power MOSFET |
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| 9 | IRF820ASPBF |
International Rectifier |
HEXFET Power MOSFET |
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| 10 | IRF820B |
Fairchild Semiconductor |
500V N-Channel MOSFET |
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Desde 2024. D4U Semiconductor.
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