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IRF820 |
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| Part Number | IRF820 |
| Manufacturer | Inchange Semiconductor |
| Description | ·Drain Current –ID= 2.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3Ω(Max) ·Fast Switching Speed ·Simple Drive Requirements ·Minimum Lot-to-Lot va... |
| Features |
ebsite：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IRF820
·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA VGS(th) Gate Threshold Voltage VDS= VGS; ID= 0.25mA RDS(on) Drain-Source On-stage Resistance VGS= 10V; ID= 1.5A IGSS Gate Source Leakage Current VGS= ±20V; VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 500V; VGS= 0 VSD Diode Forward Voltage IF= 2.5A; VGS= 0 MIN MAX UNIT 500 V 2 4 V 3 Ω ±100 nA 1 uA 1.6 V NOTICE： ... |
| Document |
 IRF820 Data Sheet
PDF 229.95KB |
| Distributor | Stock | Price | Buy |
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| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRF820 |
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| 2 | IRF820 |
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| 3 | IRF820 |
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| 4 | IRF820 |
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| 5 | IRF820 |
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| 8 | IRF820 |
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| 9 | IRF820A |
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| 10 | IRF820A |
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Desde 2024. D4U Semiconductor.
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