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IRF820 |
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| Part Number | IRF820 |
| Manufacturer | Intersil Corporation |
| Description | IRF820 Data Sheet July 1999 File Number 1581.4 2.5A, 500V, 3.000 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET desi... |
| Features |
• 2.5A, 500V • rDS(ON) = 3.000Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER IRF820 PACKAGE TO-220AB BRAND IRF820 Symbol D NOTE: When ordering, use the entire part number. G S Packaging JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) 4-245 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://... |
| Document |
 IRF820 Data Sheet
PDF 54.37KB |
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|---|---|---|---|---|
| 1 | IRF820 |
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| 2 | IRF820 |
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| 3 | IRF820 |
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| 4 | IRF820 |
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| 5 | IRF820 |
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