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IRF460 N-Channel Power MOSFET

IRF460


IRF460
Part Number IRF460
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IRF460

HARRIS
IRF460
Part Number IRF460
Manufacturer HARRIS
Title N-Channel Power MOSFET
Description .
Features .

IRF460

Inchange Semiconductor
IRF460
Part Number IRF460
Manufacturer Inchange Semiconductor
Title N-Channel MOSFET Transistor
Description ·Repetitive Avalanche Ratings ·Dynamic dv/dt Rating ·Hermetically Sealed ·Simple Drive Requirements ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for applications such as switching power Supplies ,motor controls ,in.
Features Transistor ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 1mA VGS(TH) Gate Threshold Voltage VDS= VGS; ID= 0.25mA RDS(ON)-1 Drain-Source On-stage Resistance VGS= 10V; ID= 14A RDS(ON)-2 Drain-Source On-stage Resistance VGS= 10V; ID= 21A IGSS Gate Source Leakage Current VGS= ±20V; VDS= 0 IDSS Zero Gate Voltage Drain C.

IRF460

International Rectifier
IRF460
Part Number IRF460
Manufacturer International Rectifier
Title N-Channel Power MOSFET
Description PD -90467 REPETITIVE A V ALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) Product Summary Part Number IRF460 BVDSS 500V RDS(on) 0.27Ω ID 21  IRF460 500V, N-CHANNEL The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors. The eff.
Features n n n n n Repetitive Avalanche Ratings Dynamic dv/dt Rating Hermetically Sealed Simple Drive Requirements Ease of Paralleling Absolute Maximum Ratings Parameter ID @ VGS = 0V, TC = 25°C ID @ VGS = 0V, TC = 100°C I DM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source .

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