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IRF460 |
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| Part Number | IRF460 |
| Manufacturer | Inchange Semiconductor |
| Description | ·Repetitive Avalanche Ratings ·Dynamic dv/dt Rating ·Hermetically Sealed ·Simple Drive Requirements ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable ope... |
| Features |
Transistor
ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS=0; ID= 1mA
VGS(TH) Gate Threshold Voltage
VDS= VGS; ID= 0.25mA
RDS(ON)-1 Drain-Source On-stage Resistance VGS= 10V; ID= 14A
RDS(ON)-2 Drain-Source On-stage Resistance VGS= 10V; ID= 21A
IGSS
Gate Source Leakage Current
VGS= ±20V; VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS= 400V; VGS= 0
VSD
Diode Forward Voltage
IF= 21A; VGS= 0
IRF460
MIN
TYP
MAX UNIT
500
V
2
4
V
0.27
Ω
0.31
Ω
±100
nA
25
uA
1.8
V
NOTICE： ISC reserves the rights to make... |
| Document |
 IRF460 Data Sheet
PDF 230.87KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRF460 |
HARRIS |
N-Channel Power MOSFET |
|
| 2 | IRF460 |
Seme LAB |
N-Channel Power MOSFET |
|
| 3 | IRF460 |
International Rectifier |
N-Channel Power MOSFET |
|
| 4 | IRF462 |
HARRIS |
N-Channel Power MOSFET |
|
| 5 | IRF462 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 6 | IRF4000 |
International Rectifier |
IEEE 802.3af Compliant PoE Switch |
|
Desde 2024. D4U Semiconductor.
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