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IRF4104 N-Channel 40-V (D-S) MOSFET

IRF4104


IRF4104
Part Number IRF4104
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IRF4104

International Rectifier
IRF4104
Part Number IRF4104
Manufacturer International Rectifier
Title Power MOSFET
Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive a.
Features
● Advanced Process Technology
● Ultra Low On-Resistance
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating t.

IRF4104

INCHANGE
IRF4104
Part Number IRF4104
Manufacturer INCHANGE
Title N-Channel MOSFET
Description isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF4104,IIRF4104 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤5.5mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reli.
Features
·Static drain-source on-resistance: RDS(on) ≤5.5mΩ
·Enhancement mode
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
·DESCRITION
·reliable device for use in a wide variety of applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 40 VGS Gate-Source Voltage ±20 ID D.

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