Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
|---|
IRFBC40 |
| Part Number | IRFBC40 |
| Manufacturer | STMicroelectronics |
| Title | N-Channel Power MOSFET |
| Description | This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-. |
| Features |
pulsed) Total Dissipation at Tc = 25 C Derating F actor Peak Diode Recovery voltage slope Storage T emperature Max. O perating Junction Temperature
o o o
Value 600 600 ± 20 2 3.9 25 125 1.0 3 -65 to 150 150
(1) ISD ≤ 6.2 A, di/dt ≤ 80 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
Uni t V V V A A A W W/ C V/ ns
o o o
C C
( •) Pulse width limited by safe operating area August 1998 1/8 IRFBC40 THERMAL DATA . |
IRFBC40 |
| Part Number | IRFBC40 |
| Manufacturer | International Rectifier |
| Title | Power MOSFET |
| Description | . |
| Features | . |
IRFBC40 |
| Part Number | IRFBC40 |
| Manufacturer | Vishay |
| Title | Power MOSFET |
| Description | Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to app. |
| Features |
• Dynamic dV/dt rating • Repetitive avalanche rated • Fast switching • Ease of paralleling Available Available • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) termi. |
IRFBC40 |
| Part Number | IRFBC40 |
| Manufacturer | Harris |
| Title | N-Channel Power MOSFETs |
| Description | These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as swi. |
| Features |
• 6.2A and 5.4A, 600V • rDS(ON) = 1.2Ω and 1.6Ω • Repetitive Avalanche Energy Rated • Simple Drive Requirements • Ease of Paralleling • Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER IRFBC40 IRFBC42 PACKAGE TO-220AB TO-220AB BRAND IRFBC40 IRFBC42 G Symbol D NOTE: When ordering, include the entire part number. S Pac. |
IRFBC40 |
| Part Number | IRFBC40 |
| Manufacturer | Intersil Corporation |
| Title | N-Channel Power MOSFET |
| Description | IRFBC40 Data Sheet July 1999 File Number 2157.3 6.2A, 600V, 1.200 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mod. |
| Features |
• 6.2A, 600V • rDS(ON) = 1.200Ω • Single Pulse Avalanche Energy Rated • Simple Drive Requirements • Ease of Paralleling • Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Ordering Information PART NUMBER IRFBC40 PACKAGE TO-220AB BRAND IRFBC40 S G NOTE: When ordering, include the entire part number. Packaging JEDEC TO-220AB SOURCE DRAIN GATE . |
IRFBC40 |
| Part Number | IRFBC40 |
| Manufacturer | Fairchild Semiconductor |
| Title | N-Channel Power MOSFET |
| Description | IRFBC40 Data Sheet January 2002 6.2A, 600V, 1.200 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. . |
| Features |
• 6.2A, 600V • rDS(ON) = 1.200Ω • Single Pulse Avalanche Energy Rated • Simple Drive Requirements • Ease of Paralleling • Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Ordering Information PART NUMBER IRFBC40 PACKAGE TO-220AB BRAND IRFBC40 S G NOTE: When ordering, include the entire part number. Packaging JEDEC TO-220AB SOURCE DRAIN GATE . |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRFBC40A |
International Rectifier |
Power MOSFET |
|
| 2 | IRFBC40A |
Vishay |
Power MOSFET |
|
| 3 | IRFBC40A |
INCHANGE |
N-Channel MOSFET |
|
| 4 | IRFBC40APBF |
International Rectifier |
HEXFET Power MOSFET |
|
| 5 | IRFBC40AS |
International Rectifier |
Power MOSFET |
|
| 6 | IRFBC40AS |
Vishay |
Power MOSFET |
|
| 7 | IRFBC40AS |
INCHANGE |
N-Channel MOSFET |
|
| 8 | IRFBC40L |
International Rectifier |
Power MOSFET |
|
| 9 | IRFBC40L |
Vishay |
Power MOSFET |
|
| 10 | IRFBC40L |
INCHANGE |
N-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
|