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IRFBC40 |
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| Part Number | IRFBC40 |
| Manufacturer | INCHANGE |
| Description | iscN-Channel MOSFET Transistor IRFBC40 ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 1.2Ω (MAX) ·Enhancement mode: Vth = 2 to 4V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot-to... |
| Features |
·Low drain-source on-resistance: RDS(ON) = 1.2Ω (MAX) ·Enhancement mode: Vth = 2 to 4V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 6.2 A IDM Drain Current-Single Pulsed 25 A PD Total Dissipation @TC=25℃ 125 W Tj Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~... |
| Document |
 IRFBC40 Data Sheet
PDF 278.96KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRFBC40 |
STMicroelectronics |
N-Channel Power MOSFET |
|
| 2 | IRFBC40 |
Intersil Corporation |
N-Channel Power MOSFET |
|
| 3 | IRFBC40 |
International Rectifier |
Power MOSFET |
|
| 4 | IRFBC40 |
Fairchild Semiconductor |
N-Channel Power MOSFET |
|
| 5 | IRFBC40 |
Vishay |
Power MOSFET |
|
| 6 | IRFBC40 |
Harris |
N-Channel Power MOSFETs |
|
Desde 2024. D4U Semiconductor.
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