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| Part Number | IRFBC40 |
| Manufacturer | Intersil Corporation |
| Description | IRFBC40 Data Sheet July 1999 File Number 2157.3 6.2A, 600V, 1.200 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET des... |
| Features |
• 6.2A, 600V • rDS(ON) = 1.200Ω • Single Pulse Avalanche Energy Rated • Simple Drive Requirements • Ease of Paralleling • Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Ordering Information PART NUMBER IRFBC40 PACKAGE TO-220AB BRAND IRFBC40 S G NOTE: When ordering, include the entire part number. Packaging JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) 4-263 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporatio... |
| Document |
 IRFBC40 Data Sheet
PDF 55.08KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRFBC40 |
STMicroelectronics |
N-Channel Power MOSFET |
|
| 2 | IRFBC40 |
International Rectifier |
Power MOSFET |
|
| 3 | IRFBC40 |
Fairchild Semiconductor |
N-Channel Power MOSFET |
|
| 4 | IRFBC40 |
Vishay |
Power MOSFET |
|
| 5 | IRFBC40 |
Harris |
N-Channel Power MOSFETs |
|
| 6 | IRFBC40 |
INCHANGE |
N-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
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